scholarly journals Photo-initiated chemical vapor deposition of thin films using syngas for the functionalization of surfaces at room temperature and near-atmospheric pressure

2014 ◽  
Vol 244 ◽  
pp. 98-108 ◽  
Author(s):  
C.A. Dorval Dion ◽  
W. Raphael ◽  
E. Tong ◽  
J.R. Tavares
1997 ◽  
Vol 493 ◽  
Author(s):  
H. Wang ◽  
Z. Wang ◽  
S. X. Shang ◽  
M. Wang

ABSTRACTFerroelectric Bi4Ti3O12 thin films were grown by atmospheric pressure metal-organic chemical vapor deposition. After rapid thermal annealing (RTA), the films have a (001) preferred orientation, The I-V and C-V characteristics were studied, the resistivity were in the rang of 1010∼1013 ω. cm, at room temperature. The memory window is about 3V. These results snow that The Bi4Ti3O12 films prepared at present work are suitable for making ferroelectric FEFETs memories. By using planar silicon processing, the FEFET devices have been fabricated, which shows clearly memory effect under a applied ±5V gate voltage.


Shinku ◽  
1987 ◽  
Vol 30 (2) ◽  
pp. 60-68
Author(s):  
Yoichi HIROSE ◽  
Yuki TERASAWA ◽  
Kazuya IWASAKI ◽  
Katumi TAKAHASHI ◽  
Kazuo TEZUKA

2004 ◽  
Vol 16 (6) ◽  
pp. 1120-1125 ◽  
Author(s):  
Christopher S. Blackman ◽  
Claire J. Carmalt ◽  
Shane A. O'Neill ◽  
Ivan P. Parkin ◽  
Leonardo Apostolico ◽  
...  

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