First principles total energy calculations of the adsorption of germane and digermane on Si(001)-c(2×4)

2003 ◽  
Vol 547 (1-2) ◽  
pp. 9-18 ◽  
Author(s):  
A Sánchez-Castillo ◽  
Gregorio H Cocoletzi ◽  
Noboru Takeuchi
Keyword(s):  
Total Energy ◽  
First Principles ◽  
Energy Calculations

Phase Stability of the Sigma Phase in Fe-Cr Based Alloys

1995 ◽  
Vol 408 ◽  
Author(s):  
Marcel Il. F ◽  
Sluiter. Koivan Esfurjani ◽  
Yoshiyuki Kawazoe
Keyword(s):  
Total Energy ◽  
Phase Stability ◽  
First Principles ◽  
Finite Temperature ◽  
Sigma Phase ◽  
Complex Structure ◽  
Unit Cell ◽  
Energy Calculations ◽  
Cluster Variation ◽  
The Stability

AbstractThe FeCr sigma phase is a good example of a complex structure: it. has 30 atoms in the unit cell and 5 inequivalent lattice sites, and it belongs to the class of tetrahedrally close packed structures, also known as Frank-Kaspar structures. So far. such structures have riot been treated within a first-principles statistical thermodynamics framework. It will be shown that dtlme to advances in algorithms and hardware important features of the phase stability of complex phases can be computed. The factors which affect the stability of the sigma phase have been studied using carefully selected supercells for electronic total energy calculations. cluster variation calc:ulations in the tet.rahedron approximation were performed to evaluate the effect of partial disorder and of finite temperature. The preferred occupancy of the 5 lattice sites has been investigated and is compared with experimental determinations.

Real-space implementation of nonlocal pseudopotentials for first-principles total-energy calculations

1991 ◽  
Vol 44 (23) ◽  
pp. 13063-13066 ◽  
Author(s):  
R. D. King-Smith ◽  
M. C. Payne ◽  
J. S. Lin
Keyword(s):  
Total Energy ◽  
First Principles ◽  
Real Space ◽  
Energy Calculations

A Theoretical Study of p-Type Doping of ZnO: Problems and Solutions

2001 ◽  
Vol 666 ◽  
Author(s):  
Yanfa Yan ◽  
S.B. Zhang ◽  
S.J. Pennycook ◽  
S.T. Pantelides
Keyword(s):  
Total Energy ◽  
First Principles ◽  
Theoretical Study ◽  
Energy Calculations ◽  
Defect Complexes ◽  
New Approaches ◽  
Impurity Defect ◽  
Problems And Solutions ◽  
P Type ◽  
Made In

ABSTRACTWe present results of a comprehensive set of first-principles total-energy calculations of native and impurity-defect complexes in ZnO and use these results to elucidate the problems that occur in efforts to achieve p-type doping. The analysis naturally leads to new approaches that are likely to overcome the difficulties. The results provide detailed explanations of recent puzzling observations made in attempts to produce p-type ZnO.

scholarly journals Theory of Hydrogen Reactions in Silicon

1987 ◽  
Vol 104 ◽  
Author(s):  
Chris G. Van De Walle ◽  
Y. Bar-Yam ◽  
S. T. Pantelides
Keyword(s):  
Fermi Level ◽  
Total Energy ◽  
First Principles ◽  
Type Material ◽  
Energy Calculations ◽  
And Migration ◽  
The Stability ◽  
Hydrogen Reactions ◽  
Energy Surfaces ◽  
P Type

ABSTRACTWe report first-principles total-energy calculations for H atoms in a Si lattice. Our results for single H atoms are presented in the form of total-energy surfaces, providing immediate insight in stable positions and migration paths. We examine the stability of different charge states (H+, H0, H−) as a function of Fermi-level position, and its impli-cations for H diffusion in p-type vs. n-type material. The results are used to scrutinize and supplement existing understanding of experimental observations. We also study the co-operative interactions of several H atoms, and propose a novel mechanism for H-induced damage.

Diffusion of Si Adatoms on H-Terminated Si(001) Surfaces

1997 ◽  
Vol 492 ◽  
Author(s):  
Takahisa Ohno ◽  
Jun Nara ◽  
Taizo Sasaki
Keyword(s):  
Total Energy ◽  
First Principles ◽  
Diffusion Processes ◽  
Energy Calculations ◽  
And Diffusion ◽  
Hydrogen Termination

ABSTRACTWe have investigated adsorption and diffusion processes of a Si atom on hydrogen-terminated Si(001)-(2×1) surfaces using first-principles total-energy calculations. The Si adatom segregates H atoms from surface Si dimer atoms on the monohydride terminated Si(001) surface. The migration of the Si adatom is assisted by the mobility of H atoms, that is, the Si adatom migrates on the surface by repeating release and capture of H atoms. The effects of a single H-terminated Si dimer on the Si migration are also examined. Calculated results are in good agreements with the variation in morphology of Si homoepitaxial films induced by hydrogen termination.

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