High Performance Amorphous In–Ga–Zn–O Thin-Film Transistors with Low Temperature High-k Solution Processed Hybrid Gate Insulator

2020 ◽  
Vol 9 (2) ◽  
pp. 025002
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Juan Paolo Bermundo ◽  
Toshiaki Nonaka ◽  
Mami N. Fujii ◽  
Yasuaki Ishikawa ◽  
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Y. Yamashita ◽  
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R. L. Peterson ◽  
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The ZnO/SnO2 bilayer TFTs exhibited outstanding electron mobilities and excellent electrical stabilities against a variety of bias stresses.


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Vol 11 (8) ◽  
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