Direct liquid injection metal-organic chemical vapor deposition of HfO2 thin films using Hf(dimethylaminoethoxide)4

2004 ◽  
Vol 450 (2) ◽  
pp. 272-275 ◽  
Author(s):  
Moon-Kyun Song ◽  
Sang-Woo Kang ◽  
Shi-Woo Rhee
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Liquid Injection ◽  
Metal Organic ◽  
Direct Liquid Injection ◽  
Organic Chemical Vapor Deposition

scholarly journals Alumina layer using low-cost direct liquid injection metal organic chemical vapor deposition (DLI-MOCVD) on AISI 1018 steel

2020 ◽  
Vol 18 (3) ◽  
Author(s):  
Javier Serrano Pérez ◽  
Fernando Juárez López ◽  
Edgar Serrano Pérez
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Liquid Injection ◽  
Metal Organic ◽  
Chamber Temperature ◽  
Direct Liquid Injection ◽  
Organic Chemical Vapor Deposition ◽  
Mocvd Technique

Amorphous alumina layers were deposited on low carbon steel (AISI 1018) substrates by the direct liquid injection metal organic chemical vapor deposition (DLI-MOCVD) technique. For the DLI- MOCVD technique, two temperatures were used: a vaporization chamber temperature of 180 °C and a reaction chamber temperature of 370 °C. Liquid precursor aluminum tri-sec-butoxide was introduced in form of atomized liquid, each pulse of 1 Hz frequency and 3 ms opening time, the solution was pressurized at 40 psi under inert Argon atmosphere. 200 sccm of Argon were used as continuous carrier gas during all the deposition process. Microscopy and XRD techniques were used to characterize the deposited material. The thickness of the alumina coatings was of 100 μm, approximately.

Transparent conducting indium oxide thin films grown by low-temperature metal organic chemical vapor deposition

2007 ◽  
Vol 515 (5) ◽  
pp. 2921-2925 ◽  
Author(s):  
Chunyu Wang ◽  
Volker Cimalla ◽  
Genady Cherkashinin ◽  
Henry Romanus ◽  
Majdeddin Ali ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Indium Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Transparent Conducting ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Study on ZrO2:Er Thin Films Fabricated by Metal-Organic Chemical Vapor Deposition

2003 ◽  
Vol 42 (Part 1, No. 5A) ◽  
pp. 2839-2842 ◽  
Author(s):  
Jeong Hoon Park ◽  
Kug Sun Hong ◽  
Woon Jo Cho ◽  
Jang-Hoon Chung
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Metal-organic chemical vapor deposition of ZrO2 films using Zr(thd)4 as precursors

1994 ◽  
Vol 9 (7) ◽  
pp. 1721-1727 ◽  
Author(s):  
Jie Si ◽  
Seshu B. Desu ◽  
Ching-Yi Tsai
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Organic Chemical ◽  
Deposition Rates ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Deposited Films

Synthesis of zirconium tetramethylheptanedione [Zr(thd)4] was optimized. Purity of Zr(thd)4 was confirmed by melting point determination, carbon, and hydrogen elemental analysis and proton nuclear magnetic resonance spectrometer (NMR). By using Zr(thd)4, excellent quality ZrO2 thin films were successfully deposited on single-crystal silicon wafers by metal-organic chemical vapor deposition (MOCVD) at reduced pressures. For substrate temperatures below 530 °C, the film deposition rates were very small (⋚1 nm/min). The film deposition rates were significantly affected by (i) source temperature, (ii) substrate temperature, and (iii) total pressure. As-deposited films are carbon free. Furthermore, only the tetragonal ZrO2 phase was identified in as-deposited films. The tetragonal phase transformed progressively into the monoclinic phase as the films were subjected to a high-temperature post-deposition annealing. The optical properties of the ZrO2 thin films as a function of wavelength, in the range of 200 nm to 2000 nm, were also reported. In addition, a simplified theoretical model which considers only a surface reaction was used to analyze the deposition of ZrO2 films. The model predicated the deposition rates well for various conditions in the hot wall reactor.

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