Growth of bismuth oxide films by direct liquid injection-metal organic chemical vapor deposition with Bi(tmhd)3 (tmhd: 2,2,6,6-tetramethyl-3,5-heptanedione)

2004 ◽  
Vol 468 (1-2) ◽  
pp. 79-83 ◽  
Author(s):  
S.W. Kang ◽  
S.W. Rhee
Author(s):  
Javier Serrano Pérez ◽  
Fernando Juárez López ◽  
Edgar Serrano Pérez

Amorphous alumina layers were deposited on low carbon steel (AISI 1018) substrates by the direct liquid injection metal organic chemical vapor deposition (DLI-MOCVD) technique. For the DLI- MOCVD technique, two temperatures were used: a vaporization chamber temperature of 180 °C and a reaction chamber temperature of 370 °C. Liquid precursor aluminum tri-sec-butoxide was introduced in form of atomized liquid, each pulse of 1 Hz frequency and 3 ms opening time, the solution was pressurized at 40 psi under inert Argon atmosphere. 200 sccm of Argon were used as continuous carrier gas during all the deposition process. Microscopy and XRD techniques were used to characterize the deposited material. The thickness of the alumina coatings was of 100 μm, approximately.


2013 ◽  
Vol 277 ◽  
pp. 1-6 ◽  
Author(s):  
Li-Wei Weng ◽  
Wu-Yih Uen ◽  
Shan-Ming Lan ◽  
Sen-Mao Liao ◽  
Tsun-Neng Yang ◽  
...  

2012 ◽  
pp. 291-336 ◽  
Author(s):  
Sanjay Mathur ◽  
Aadesh Pratap Singh ◽  
Ralf Müller ◽  
Tessa Leuning ◽  
Thomas Lehnen ◽  
...  

2014 ◽  
pp. 291-336 ◽  
Author(s):  
Sanjay Mathur ◽  
Aadesh Pratap Singh ◽  
Ralf Müller ◽  
Tessa Leuning ◽  
Thomas Lehnen ◽  
...  

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