Инфракрасные (850 нм) светодиоды с множественными квантовыми ямами InGaAs и "тыльным" отражателем

Investigation of IR light emitting diodes (wavelength 850 nm) based on heterostructures AlGaAs/GaAs with multiple quantum wells InGaAs in the region generating radiation, grown by the MOCVD technique, has been carried out. Post-growth technologies for removing the growth substrate GaAs and for transfer the heterostructure on an alien carrier with an optical reflector have been developed. Technological regimes for fabricating the reflector has been optimized and the increase of the IR radiation reflection coefficient up to 92-93% has been achieved. Light-emitting diodes with the external quantum efficiency of 28.5% have been fabricated.

Alumina layer using low-cost direct liquid injection metal organic chemical vapor deposition (DLI-MOCVD) on AISI 1018 steel

Amorphous alumina layers were deposited on low carbon steel (AISI 1018) substrates by the direct liquid injection metal organic chemical vapor deposition (DLI-MOCVD) technique. For the DLI- MOCVD technique, two temperatures were used: a vaporization chamber temperature of 180 °C and a reaction chamber temperature of 370 °C. Liquid precursor aluminum tri-sec-butoxide was introduced in form of atomized liquid, each pulse of 1 Hz frequency and 3 ms opening time, the solution was pressurized at 40 psi under inert Argon atmosphere. 200 sccm of Argon were used as continuous carrier gas during all the deposition process. Microscopy and XRD techniques were used to characterize the deposited material. The thickness of the alumina coatings was of 100 μm, approximately.