Ion-beam-assisted molecular-beam epitaxy: a method to deposit gallium nitride films with high crystalline quality

2004 ◽  
Vol 458 (1-2) ◽  
pp. 63-66 ◽  
Author(s):  
S. Sienz ◽  
J.W. Gerlach ◽  
T. Höche ◽  
A. Sidorenko ◽  
B. Rauschenbach
2004 ◽  
Vol 264 (1-3) ◽  
pp. 184-191 ◽  
Author(s):  
S Sienz ◽  
J.W Gerlach ◽  
T Höche ◽  
A Sidorenko ◽  
T.G Mayerhöfer ◽  
...  

2000 ◽  
Vol 208 (1-4) ◽  
pp. 205-210 ◽  
Author(s):  
S.P Guo ◽  
Y Luo ◽  
W Lin ◽  
O Maksimov ◽  
M.C Tamargo ◽  
...  

2005 ◽  
Vol 202 (12) ◽  
pp. 2361-2367
Author(s):  
Jürgen W. Gerlach ◽  
Thomas Höche

2016 ◽  
Vol 45 (12) ◽  
pp. 6292-6299 ◽  
Author(s):  
M. Brooks Tellekamp ◽  
Joshua C. Shank ◽  
Mark S. Goorsky ◽  
W. Alan Doolittle

2012 ◽  
Vol 511 (1) ◽  
pp. 1-4 ◽  
Author(s):  
Kuang-Wei Liu ◽  
Sheng-Joue Young ◽  
Shoou-Jinn Chang ◽  
Tao-Hung Hsueh ◽  
Hung Hung ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document