Electrical and optical characteristics of ITO films by pulsed laser deposition using a 10 wt.% SnO2-doped In2O3 ceramic target

AbstractThe characteristics of indium tin oxide (ITO) films grown at room temperature on (100) Si and Coming glass substrates by an in situ ultraviolet-assisted pulsed laser deposition (UVPLD) technique have been investigated. The most important parameter, which influenced the optical and electrical properties of the grown films, was the oxygen pressure. For oxygen pressure below 1 mtorr, films were metallic, with very low optical transmittance and rather high resistivity values. The resistivity value decreased when using higher oxygen pressures while the optical transmittance increased. The optimum oxygen pressure was found to be around 10 mtorr. For higher oxygen pressures, the optical transmittance was better but a rapid degradation of the electrical conductivity was noticed. X-ray photoelectron spectroscopy investigations showed that ITO films grown at 10 mtorr oxygen are fully oxidized. All of the grown films were amorphous regardless of the oxygen pressure used.

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Optical Characteristics of ZnTeO Thin Films Synthesized by Pulsed Laser Deposition and Molecular Beam Epitaxy

Journal of Electronic Materials ◽

10.1007/s11664-008-0577-2 ◽

2008 ◽

Vol 38 (1) ◽

pp. 119-125 ◽

Cited By ~ 37

Author(s):

W. Wang ◽

W. Bowen ◽

S. Spanninga ◽

S. Lin ◽

J. Phillips

Keyword(s):

Thin Films ◽

Molecular Beam Epitaxy ◽

Pulsed Laser Deposition ◽

Molecular Beam ◽

Pulsed Laser ◽

Laser Deposition ◽

Optical Characteristics

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Electrical properties of crystalline ITO films prepared at room temperature by pulsed laser deposition on plastic substrates

Thin Solid Films ◽

10.1016/s0040-6090(02)00169-4 ◽

2002 ◽

Vol 411 (1) ◽

pp. 32-35 ◽

Cited By ~ 42

Author(s):

Hirokazu Izumi ◽

Tsuguo Ishihara ◽

Hideki Yoshioka ◽

Muneyuki Motoyama

Keyword(s):

Electrical Properties ◽

Pulsed Laser Deposition ◽

Room Temperature ◽

Pulsed Laser ◽

Laser Deposition ◽

Plastic Substrates ◽

Ito Films

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Room Temperature Growth of Indium Tin Oxide Films by Ultraviolet-Assisted Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-623-277 ◽

2000 ◽

Vol 623 ◽

Author(s):

V. Craciun ◽

D. Craciun ◽

Z. Chen ◽

J. Hwang ◽

R.K. Singh

Keyword(s):

Pulsed Laser Deposition ◽

Oxygen Pressure ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Room Temperature ◽

Pulsed Laser ◽

Optical Transmittance ◽

Laser Deposition ◽

High Resistivity ◽

Ito Films

AbstractThe characteristics of indium tin oxide (ITO) films grown at room temperature on (100) Si and Corning glass substrates by an in situ ultraviolet-assisted pulsed laser deposition (UVPLD) technique have been investigated. The most important parameter, which influenced the optical and electrical properties of the grown films, was the oxygen pressure. For oxygen pressure below 1 mtorr, films were metallic, with very low optical transmittance and rather high resistivity values. The resistivity value decreased when using higher oxygen pressures while the optical transmittance increased. The optimum oxygen pressure was found to be around 10 mtorr. For higher oxygen pressures, the optical transmittance was better but a rapid degradation of the electrical conductivity was noticed. X-ray photoelectron spectroscopy investigations showed that ITO films grown at 10 mtorr oxygen are fully oxidized. All of the grown films were amorphous regardless of the oxygen pressure used.

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