Effects of plasma treatments on structural and electrical properties of methyl-doped silicon oxide low dielectric constant film

2006 ◽  
Vol 496 (2) ◽  
pp. 402-411 ◽  
Author(s):  
W.Y. Leong ◽  
C.F. Tsang ◽  
H.Y. Li ◽  
V. Bliznetsov ◽  
L.Y. Wong ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Silicon Oxide ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Plasma Treatments ◽  
Structural And Electrical Properties ◽  
Doped Silicon

Effects of annealing on low dielectric constant carbon doped silicon oxide films

2006 ◽  
Vol 15 (1) ◽  
pp. 133-137 ◽  
Author(s):  
E. Rusli ◽  
M.R. Wang ◽  
T.K.S. Wong ◽  
M.B. Yu ◽  
C.Y. Li
Keyword(s):  
Dielectric Constant ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Low Dielectric Constant ◽  
Carbon Doped ◽  
Low Dielectric ◽  
Doped Silicon

Structure characterization of carbon and fluorine-doped silicon oxide films with low dielectric constant

2001 ◽  
Vol 71 (2) ◽  
pp. 125-130 ◽  
Author(s):  
Shi-Jin Ding ◽  
Li Chen ◽  
Xin-Gong Wan ◽  
Peng-Fei Wang ◽  
Jian-Yun Zhang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Structure Characterization ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Doped Silicon

Low Dielectric Constant Interlayer Using Fluorine-Doped Silicon Oxide

1994 ◽  
Vol 33 (Part 1, No. 1B) ◽  
pp. 408-412 ◽  
Author(s):  
Takashi Usami ◽  
Kimiaki Shimokawa ◽  
Masaki Yoshimaru
Keyword(s):  
Dielectric Constant ◽  
Silicon Oxide ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Doped Silicon

A method to derivatize surface silanol groups to Si-alkyl groups in carbon-doped silicon oxides

RSC Advances ◽  
2016 ◽  
Vol 6 (95) ◽  
pp. 93219-93230 ◽  
Author(s):  
Srikar Rao Darmakkolla ◽  
Hoang Tran ◽  
Atul Gupta ◽  
Shankar B. Rananavare
Keyword(s):  
Dielectric Constant ◽  
Integrated Circuits ◽  
Silicon Oxide ◽  
Copper Interconnects ◽  
Low Dielectric Constant ◽  
Silicon Oxides ◽  
Carbon Doped ◽  
Low Dielectric ◽  
Alkyl Groups ◽  
Doped Silicon

A carbon-doped silicon oxide (CDO) finds use as a material with a low dielectric constant (k) for copper interconnects in multilayered integrated circuits (ICs).

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