Effect of oxygen plasma treatment on low dielectric constant carbon-doped silicon oxide thin films

2005 ◽  
Vol 473 (1) ◽  
pp. 132-136 ◽  
Author(s):  
Y.H. Wang ◽  
R. Kumar ◽  
X. Zhou ◽  
J.S. Pan ◽  
J.W. Chai
2006 ◽  
Vol 15 (1) ◽  
pp. 133-137 ◽  
Author(s):  
E. Rusli ◽  
M.R. Wang ◽  
T.K.S. Wong ◽  
M.B. Yu ◽  
C.Y. Li

RSC Advances ◽  
2016 ◽  
Vol 6 (95) ◽  
pp. 93219-93230 ◽  
Author(s):  
Srikar Rao Darmakkolla ◽  
Hoang Tran ◽  
Atul Gupta ◽  
Shankar B. Rananavare

A carbon-doped silicon oxide (CDO) finds use as a material with a low dielectric constant (k) for copper interconnects in multilayered integrated circuits (ICs).


2001 ◽  
Vol 71 (2) ◽  
pp. 125-130 ◽  
Author(s):  
Shi-Jin Ding ◽  
Li Chen ◽  
Xin-Gong Wan ◽  
Peng-Fei Wang ◽  
Jian-Yun Zhang ◽  
...  

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