Structure characterization of carbon and fluorine-doped silicon oxide films with low dielectric constant

2001 ◽  
Vol 71 (2) ◽  
pp. 125-130 ◽  
Author(s):  
Shi-Jin Ding ◽  
Li Chen ◽  
Xin-Gong Wan ◽  
Peng-Fei Wang ◽  
Jian-Yun Zhang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Structure Characterization ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Doped Silicon

Effects of annealing on low dielectric constant carbon doped silicon oxide films

2006 ◽  
Vol 15 (1) ◽  
pp. 133-137 ◽  
Author(s):  
E. Rusli ◽  
M.R. Wang ◽  
T.K.S. Wong ◽  
M.B. Yu ◽  
C.Y. Li
Keyword(s):  
Dielectric Constant ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Low Dielectric Constant ◽  
Carbon Doped ◽  
Low Dielectric ◽  
Doped Silicon

Infrared spectroscopy study of low-dielectric-constant fluorine-incorporated and carbon-incorporated silicon oxide films

2001 ◽  
Vol 90 (7) ◽  
pp. 3367-3370 ◽  
Author(s):  
Yoon-Hae Kim ◽  
Moo Sung Hwang ◽  
Hyeong Joon Kim ◽  
Jin Yong Kim ◽  
Young Lee
Keyword(s):  
Dielectric Constant ◽  
Infrared Spectroscopy ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Low Dielectric Constant ◽  
Spectroscopy Study ◽  
Low Dielectric

Deposition and Characterization of PECVD SiOC Films by Using Bistrimethylsilylmethane (BTMSM) Precursor

2001 ◽  
Vol 714 ◽  
Author(s):  
Yoon-Hae Kim ◽  
Moo Sung Hwang ◽  
Young Lee ◽  
Hyeong Joon Kim
Keyword(s):  
Dielectric Constant ◽  
Etch Rate ◽  
Silicon Oxide ◽  
Hydrogen Plasma ◽  
Low Dielectric Constant ◽  
Film Properties ◽  
Interlayer Dielectric ◽  
Low Dielectric ◽  
Process Compatibility

ABSTRACTCarbon-containing silicon oxide (SiOC) is regarded as a potential low dielectric constant (low-κ) material for an interlayer dielectric (ILD) in next generation interconnection. In this study, we present the fundamental film properties and integration process compatibility of the low-κ SiOC film deposited by using bistrimethylsilylmethane (BTMSM) precursor. As more carbon was incorporated into film, both film density and dielectric constant decreased. The lowest κ-value, which we have obtained in this study, was 2.3 and the hardness of SiOC film was 1.1GPa as well as showing the thermal stability up to 500°C. In case of using conventional gases, organic components in SiOC film restricted etch rate. However, O2 addition could make it possible to obtaine a reasonable etch rate. The post-treatment of SiOC film in hydrogen plasma improved the resistance to O2 plasma in ashing process. The compatibility of SiOC film to the CMP process was also examined.

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