5 nm thick lanthanum oxide thin films grown on Si(100) by atomic layer deposition: The effect of post-annealing on the electrical properties

2006 ◽  
Vol 513 (1-2) ◽  
pp. 253-257 ◽  
Author(s):  
Sang Jin Jo ◽  
Jeong Sook Ha ◽  
Nam Kyun Park ◽  
Dong Kyun Kang ◽  
Byong-Ho Kim
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Lanthanum Oxide ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Post Annealing ◽  
Layer Deposition

Effects ofin-situmolecular oxygen exposure on the modulation of electrical properties of zinc oxide thin films grown by atomic layer deposition

2014 ◽  
Vol 212 (2) ◽  
pp. 323-328 ◽  
Author(s):  
Hui Kyung Park ◽  
Bong Seob Yang ◽  
Myung Sang Kim ◽  
Sanghyun Park ◽  
Jeong Hwan Han ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Oxygen Exposure ◽  
Layer Deposition

scholarly journals Fabrication of GdxFeyOz films using an atomic layer deposition-type approach

CrystEngComm ◽  
2021 ◽  
Author(s):  
Pengmei Yu ◽  
Sebastian M. J. Beer ◽  
Anjana Devi ◽  
Mariona Coll
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Complex Oxide ◽  
Oxide Thin Films ◽  
Layer Deposition ◽  
Atomic Precision

The growth of complex oxide thin films with atomic precision offers bright prospects to study improved properties and novel functionalities.

Electrical Properties of Srta2O6 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition (Peald)

2001 ◽  
Vol 685 ◽  
Author(s):  
Won-Jae Lee ◽  
Chang-Ho Shin ◽  
In-Kyu You ◽  
Il-Suk Yang ◽  
Sang-Ouk Ryu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Leakage Current ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Layer Deposition ◽  
Current Characteristics

AbstractThe SrTa2O6 (STO) thin films were prepared by plasma enhanced atomic layer deposition (PEALD) with alternating supply of reactant sources, Sr[Ta(C2H5O)5(C4H10NO)]2 {Strontium bis-[tantalum penta-ethoxide dimethyllaminoethoxide]; Sr(Ta(OEt)5▪dmae)2} and O2plasma. It was observed that the uniform and conformal STO thin films were successfully deposited using PEALD and the film thickness per cycle was saturated at about 0.8 nm at 300°C. Electrical properties of SrTa2O6 (STO) thin films prepared on Pt/SiO2/Si substrates with annealing temperatures have been investigated. While the grain size and dielectric constant of STO films increased with increasing annealing temperature, the leakage current characteristics of STO films slightly deteriorated. The leakage current density of a 40nm-STO film was about 5×10−8A/cm2 at 3V.

Cyclopentadienyl Precursors for the Atomic Layer Deposition of Erbium Oxide Thin Films

2014 ◽  
Vol 20 (7-8-9) ◽  
pp. 217-223 ◽  
Author(s):  
Timothee Blanquart ◽  
Mikko Kaipio ◽  
Jaakko Niinistö ◽  
Marco Gavagnin ◽  
Valentino Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Erbium Oxide ◽  
Oxide Thin Films ◽  
Layer Deposition

scholarly journals Preparation of Hafnium Oxide Thin Films grown by Atomic Layer Deposition

2005 ◽  
Vol 15 (4) ◽  
pp. 275-280
Author(s):  
Hie-Chul Kim ◽  
Min-Wan Kim ◽  
Hyung-Su Kim ◽  
Hyug-Jong Kim ◽  
Woo-Keun Sohn ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Layer Deposition
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