Temperature dependent study on the microwave noise performance of metamorphic InP/InGaAs heterojunction bipolar transistors

2007 ◽  
Vol 515 (10) ◽  
pp. 4514-4516 ◽  
Author(s):  
Hong Yang ◽  
Hong Wang ◽  
K. Radhakrishnan
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Noise Performance ◽  
Temperature Dependent ◽  
Microwave Noise ◽  
Temperature Dependent Study

Investigation of electron delay in the base on noise performance in InGaP heterojunction bipolar transistors

2010 ◽  
Vol 4 (11) ◽  
pp. 335-337 ◽  
Author(s):  
A. Shimukovitch ◽  
P. Sakalas ◽  
P. Zampardi ◽  
M. Schroter ◽  
A. Matulionis
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Noise Performance

scholarly journals Noise Parameter Analysis of SiGe HBTs for Different Sizes in the Breakdown Region

2016 ◽  
Vol 2016 ◽  
pp. 1-5
Author(s):  
Chie-In Lee ◽  
Yan-Ting Lin ◽  
Wei-Cheng Lin
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Silicon Germanium ◽  
Noise Figure ◽  
Rf Circuits ◽  
Bipolar Transistors ◽  
Parameter Analysis ◽  
Noise Performance ◽  
Noise Spectral Density ◽  
Breakdown Mechanism ◽  
Breakdown Region

Noise parameters of silicon germanium (SiGe) heterojunction bipolar transistors (HBTs) for different sizes are investigated in the breakdown region for the first time. When the emitter length of SiGe HBTs shortens, minimum noise figure at breakdown decreases. In addition, narrower emitter width also decreases noise figure of SiGe HBTs in the avalanche region. Reduction of noise performance for smaller emitter length and width of SiGe HBTs at breakdown resulted from the lower noise spectral density resulting from the breakdown mechanism. Good agreement between experimental and simulated noise performance at breakdown is achieved for different sized SiGe HBTs. The presented analysis can benefit the RF circuits operating in the breakdown region.

Microwave noise and power performance of metamorphic InP heterojunction bipolar transistors

2001 ◽  
Vol 49 (12) ◽  
pp. 2408-2412 ◽  
Author(s):  
S. Halder ◽  
Yong Zhong Xiong ◽  
Geok-Ing Ng ◽  
Hong Wang ◽  
Haiqun Zheng ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Power Performance ◽  
Microwave Noise

Investigation of temperature-dependent performances of InP/In0.53Ga0.34Al0.13As heterojunction bipolar transistors

2000 ◽  
Vol 15 (12) ◽  
pp. 1101-1106 ◽  
Author(s):  
Hsi-Jen Pan ◽  
Wei-Chou Wang ◽  
Kong-Beng Thei ◽  
Chin-Chuan Cheng ◽  
Kuo-Hui Yu ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Temperature Dependent
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