Low-noise performance of SiGe heterojunction bipolar transistors

2002 ◽  
Author(s):  
H. Schumacher ◽  
U. Erben ◽  
A. Gruhle
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Low Noise ◽  
Bipolar Transistors ◽  
Noise Performance

scholarly journals A Low-Power, Low-Noise 37-MHz Photoreceiver for Intersatellite Laser Interferometers Using Discrete Heterojunction Bipolar Transistors

2018 ◽  
Vol 18 (18) ◽  
pp. 7414-7420 ◽  
Author(s):  
German Fernandez Barranco ◽  
Benjamin S. Sheard ◽  
Christian Dahl ◽  
Wolfgang Mathis ◽  
Gerhard Heinzel
Keyword(s):  
Low Power ◽  
Heterojunction Bipolar Transistors ◽  
Low Noise ◽  
Bipolar Transistors ◽  
Laser Interferometers

Investigation of electron delay in the base on noise performance in InGaP heterojunction bipolar transistors

2010 ◽  
Vol 4 (11) ◽  
pp. 335-337 ◽  
Author(s):  
A. Shimukovitch ◽  
P. Sakalas ◽  
P. Zampardi ◽  
M. Schroter ◽  
A. Matulionis
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Noise Performance

scholarly journals Noise Parameter Analysis of SiGe HBTs for Different Sizes in the Breakdown Region

2016 ◽  
Vol 2016 ◽  
pp. 1-5
Author(s):  
Chie-In Lee ◽  
Yan-Ting Lin ◽  
Wei-Cheng Lin
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Silicon Germanium ◽  
Noise Figure ◽  
Rf Circuits ◽  
Bipolar Transistors ◽  
Parameter Analysis ◽  
Noise Performance ◽  
Noise Spectral Density ◽  
Breakdown Mechanism ◽  
Breakdown Region

Noise parameters of silicon germanium (SiGe) heterojunction bipolar transistors (HBTs) for different sizes are investigated in the breakdown region for the first time. When the emitter length of SiGe HBTs shortens, minimum noise figure at breakdown decreases. In addition, narrower emitter width also decreases noise figure of SiGe HBTs in the avalanche region. Reduction of noise performance for smaller emitter length and width of SiGe HBTs at breakdown resulted from the lower noise spectral density resulting from the breakdown mechanism. Good agreement between experimental and simulated noise performance at breakdown is achieved for different sized SiGe HBTs. The presented analysis can benefit the RF circuits operating in the breakdown region.

High-speed, low-noise InGaP/GaAs heterojunction bipolar transistors

1995 ◽  
Vol 16 (12) ◽  
pp. 540-541 ◽  
Author(s):  
M.T. Fresina ◽  
D.A. Ahmari ◽  
P.J. Mares ◽  
Q.J. Hartmann ◽  
M. Feng ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Low Noise ◽  
Bipolar Transistors
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