scholarly journals Noise Parameter Analysis of SiGe HBTs for Different Sizes in the Breakdown Region

2016 ◽  
Vol 2016 ◽  
pp. 1-5
Author(s):  
Chie-In Lee ◽  
Yan-Ting Lin ◽  
Wei-Cheng Lin
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Silicon Germanium ◽  
Noise Figure ◽  
Rf Circuits ◽  
Bipolar Transistors ◽  
Parameter Analysis ◽  
Noise Performance ◽  
Noise Spectral Density ◽  
Breakdown Mechanism ◽  
Breakdown Region

Noise parameters of silicon germanium (SiGe) heterojunction bipolar transistors (HBTs) for different sizes are investigated in the breakdown region for the first time. When the emitter length of SiGe HBTs shortens, minimum noise figure at breakdown decreases. In addition, narrower emitter width also decreases noise figure of SiGe HBTs in the avalanche region. Reduction of noise performance for smaller emitter length and width of SiGe HBTs at breakdown resulted from the lower noise spectral density resulting from the breakdown mechanism. Good agreement between experimental and simulated noise performance at breakdown is achieved for different sized SiGe HBTs. The presented analysis can benefit the RF circuits operating in the breakdown region.

Design and Analysis of Micromachined Thermosyphon for Cooling of High-Power InP HBT Circuits

2003 ◽  
Author(s):  
H. Khalkhali ◽  
S. Mohammadi ◽  
L. P. B. Katehi ◽  
K. Kurabayashi
Keyword(s):  
High Power ◽  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Rf Circuits ◽  
Bipolar Transistors ◽  
Working Fluid ◽  
Thermal Reliability ◽  
Drive Power ◽  
On Chip ◽  
Micrometer Scale

Integrated InP heterojunction bipolar transistors (HBTs) are used as a high-speed switch in high-power radio frequency (RF) circuits for microwave wireless communications. The power dissipation of each of these devices often reaches as high as 1 W, raising concerns for their thermal reliability. The relatively poor thermal conductivity of InP prohibits effective spreading of heat within the device substrate. To address this problem, this work proposes a novel microfluidic device called the “micro thermosyphon” for cooling the InP-based microwave circuits. This paper describes the concept of the micro thermosyphon and presents its design and analysis, accounting for the large surface tension effect of the working fluid at the micrometer scale. Our simulation suggests that the proposed device could remove a heat flux density as large as 25 W/cm2 from a high-power InP HBT circuit while maintaining the circuit temperature lower than 100 °C. The micro thermosyphon is a fully passive cooling device suited for achieving effective on-chip cooling without requiring any drive power. Experimental work is currently being under way to validate the device performance.

Investigation of electron delay in the base on noise performance in InGaP heterojunction bipolar transistors

2010 ◽  
Vol 4 (11) ◽  
pp. 335-337 ◽  
Author(s):  
A. Shimukovitch ◽  
P. Sakalas ◽  
P. Zampardi ◽  
M. Schroter ◽  
A. Matulionis
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Noise Performance
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