Preparation and properties of sol–gel-derived Bi0.5Na0.5TiO3 lead-free ferroelectric thin film

2007 ◽  
Vol 515 (7-8) ◽  
pp. 3563-3566 ◽  
Author(s):  
T. Yu ◽  
K.W. Kwok ◽  
H.L.W. Chan
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Ferroelectric Thin Film ◽  
Lead Free

Effect of neutron irradiation on (K,Na,Li)(Ta,Nb)O3-CaZrO3 lead-free ferroelectric thin film with different oxide electrodes

2019 ◽  
Vol 788 ◽  
pp. 30-35
Author(s):  
Xiangyu Sun ◽  
Dongdong Gong ◽  
Liqiang Xu ◽  
Yicheng Wang ◽  
Feng Qin ◽  
...  
Keyword(s):  
Thin Film ◽  
Neutron Irradiation ◽  
Ferroelectric Thin Film ◽  
Lead Free ◽  
Oxide Electrodes

scholarly journals High energy storage performance in lead-free BiFeO3-BaTiO3 ferroelectric thin film fabricated by pulsed laser deposition

AIP Advances ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 085005 ◽  
Author(s):  
Yuqing Hu ◽  
Qingxiu Xie ◽  
Ruihong Liang ◽  
Xiangyong Zhao ◽  
Zhiyong Zhou ◽  
...  
Keyword(s):  
Thin Film ◽  
Energy Storage ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Film ◽  
High Energy ◽  
Laser Deposition ◽  
Lead Free ◽  
Storage Performance ◽  
High Energy Storage

Large Piezoelectric Effect in a Lead-Free Molecular Ferroelectric Thin Film

2017 ◽  
Vol 139 (49) ◽  
pp. 18071-18077 ◽  
Author(s):  
Wei-Qiang Liao ◽  
Yuan-Yuan Tang ◽  
Peng-Fei Li ◽  
Yu-Meng You ◽  
Ren-Gen Xiong
Keyword(s):  
Thin Film ◽  
Piezoelectric Effect ◽  
Ferroelectric Thin Film ◽  
Lead Free

Photovoltaic effect of lead-free (Na0.82K0.18)0.5Bi4.5Ti4O15 ferroelectric thin film using Pt and indium tin oxide top electrodes

2014 ◽  
Vol 115 (3) ◽  
pp. 034107 ◽  
Author(s):  
Won Seok Woo ◽  
Sung Sik Won ◽  
Chang Won Ahn ◽  
Song A Chae ◽  
Aman Ullah ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Photovoltaic Effect ◽  
Ferroelectric Thin Film ◽  
Lead Free

Sol-gel processing of strontium-barium niobate ferroelectric thin film

1990 ◽  
Vol 5 (5) ◽  
pp. 916-918 ◽  
Author(s):  
Ren Xu ◽  
Yuhuan Xu ◽  
Ching Jih Chen ◽  
John D. Mackenzie
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Single Crystal Silicon ◽  
Ferroelectric Thin Film ◽  
Processing Temperature ◽  
Strontium Barium Niobate ◽  
Strontium Barium ◽  
Crystal Silicon ◽  
Glass Slides ◽  
Gel Processing

Ferroelectric thin film of strontium-barium niobate was successfully fabricated by the sol-gel technique. The films were made on several types of substrate, including quartz, single crystal silicon wafer, and glass slides. The processing temperature was as low as 700 °C. The film obtained with thickness of 3000 Å was dense, transparent, and showed excellent ferroelectricity.

Coexistence of giant positive and large negative electrocaloric effects in lead-free ferroelectric thin film for continuous solid-state refrigeration

Nano Energy ◽  
2021 ◽  
pp. 106222
Author(s):  
Changhong Yang ◽  
Chao Feng ◽  
Panpan Lv ◽  
Jin Qian ◽  
Yajie Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Ferroelectric Thin Film ◽  
Lead Free

Vacancy Related Defects in Thin Film Pb(ZrTi)O3 Materials

1994 ◽  
Vol 361 ◽  
Author(s):  
A. Krishnan ◽  
D.J. Keeble ◽  
R. Ramesh ◽  
W.L. Warren ◽  
B.A. Tuttle ◽  
...  
Keyword(s):  
Thin Film ◽  
Laser Ablation ◽  
Positron Annihilation ◽  
Sol Gel ◽  
Ferroelectric Thin Film ◽  
Positron Beam ◽  
S Parameter ◽  
Pt Electrodes ◽  
Post Deposition ◽  
Variable Energy

ABSTRACTPositron annihilation techniques have been applied to characterize vacancy-related defects in ferroelectric thin film structures. Variable energy positron beam measurements were carried out on doped and undoped Pb(Zr,Ti)O3 (PZT) samples subjected to different post-deposition cool down and anneal conditions. The PZT was deposited by sol-gel with either with platinum or RuO2 electrodes, or by laser ablation with La0.5Sr0.5CoO3 electrodes. The RuO2 and La0.5Sr0.5CoO3 electrode samples showed a smaller S-parameter compared to those deposited with Pt electrodes consistent with an improved PZT layer quality. For laser ablated samples cooled in a reducing ambient an increase in S-parameter for both the PZT and La0.5Sr0.5CoO3 layers was observed indicating an increase in neutral or negatively charged open-volume defects.

Sign in / Sign up

Export Citation Format

Share Document