Electric characteristics of organic thin-film transistors and logic circuits with a ferroelectric gate insulator

2007 ◽  
Vol 515 (19) ◽  
pp. 7688-7691 ◽  
Author(s):  
Yong Suk Yang ◽  
Hye Yong Chu ◽  
Seong Hyun Kim ◽  
Sang Chul Lim ◽  
Jae Bon Koo ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Logic Circuits ◽  
Organic Thin Film Transistors ◽  
Gate Insulator ◽  
Organic Thin Film

Flexible, high mobility short-channel organic thin film transistors and logic circuits based on 4H-21DNTT

2021 ◽  
Author(s):  
Anubha Bilgaiyan ◽  
Seung-Il Cho ◽  
Miho Abiko ◽  
Kaori Watanabe ◽  
Makoto Mizukami
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Channel Length ◽  
Logic Circuits ◽  
Organic Thin Film Transistors ◽  
Limiting Factors ◽  
Organic Thin Film ◽  
Short Channel ◽  
Inverter Circuit

Abstract The low mobility and large contact resistance in organic thin-film transistors (OTFTs) are the two major limiting factors in the development of high-performance organic logic circuits. Here, solution-processed high-performance OTFTs and circuits are reported with a polymeric gate dielectric and 6,6 bis (trans-4-butylcyclohexyl)-dinaphtho[2,1-b:2,1-f ]thieno[3,2-b]thiophene (4H-21DNTT) for the organic semiconducting layer. By optimizing and controlling the fabrication conditions, a record high saturation mobility of 8.8 cm2V− 1s− 1 was demonstrated as well as large on/off ratios (> 106) for relatively short channel lengths of 15 µm and an average carrier mobility of 10.5 cm2V-1s-1 for long channel length OTFTs (> 50 µm). The pseudo-CMOS inverter circuit with a channel length of 15 µm exhibited sharp switching characteristics with a high signal gain of 31.5 at a supply voltage of 20 V. In addition to the inverter circuit, NAND logic circuits were further investigated, which also exhibited remarkable logic characteristics, with a high gain, an operating frequency of 5 kHz, and a short propagation delay of 22.1 µs. The uniform and reproducible performance of 4H-21DNTT OTFTs show potential for large-area, low-cost real-world applications on industry-compatible bottom-contact substrates.

Low-voltage organic thin-film transistors with hydrophobic hafnium oxynitride film as gate insulator

2010 ◽  
Vol 11 (1) ◽  
pp. 123-126 ◽  
Author(s):  
Li-Shiuan Tsai ◽  
Chung-Hwa Wang ◽  
Wei-Yu Chen ◽  
Wen-Chieh Wang ◽  
Jennchang Hwang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Gate Insulator ◽  
Organic Thin Film ◽  
Oxynitride Film ◽  
Hafnium Oxynitride

Gate Insulator Morphology-Dependent Reliability in Organic Thin-Film Transistors

2016 ◽  
Vol 37 (2) ◽  
pp. 228-230 ◽  
Author(s):  
Hua-Mao Chen ◽  
Ting-Chang Chang ◽  
Ya-Hsiang Tai ◽  
Hsiao-Cheng Chiang ◽  
Kuan-Hsien Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Gate Insulator ◽  
Organic Thin Film

Polyimide/polyvinyl alcohol bilayer gate insulator for low-voltage organic thin-film transistors

2015 ◽  
Vol 23 ◽  
pp. 213-218 ◽  
Author(s):  
Sungmi Yoo ◽  
Yun Ho Kim ◽  
Jae-Won Ka ◽  
Yong Seok Kim ◽  
Mi Hye Yi ◽  
...  
Keyword(s):  
Thin Film ◽  
Polyvinyl Alcohol ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Gate Insulator ◽  
Organic Thin Film
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