Comparison between titania thick films obtained through sol–gel and hydrothermal synthetic processes

M.C. Carotta; S. Gherardi; C. Malagù; M. Nagliati; B. Vendemiati; G. Martinelli; M. Sacerdoti; I.G. Lesci

doi:10.1016/j.tsf.2007.03.020

Lead zirconate titanate thick films by sol-gel method for piezoelectric applications

Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectrics, 2002. ISAF 2002. ◽

10.1109/isaf.2002.1195969 ◽

2003 ◽

Author(s):

Y. Ohya ◽

T. Tamakoshi ◽

T. Ban ◽

Y. Takahashi

Keyword(s):

Lead Zirconate Titanate ◽

Thick Films ◽

Sol Gel ◽

Lead Zirconate ◽

Gel Method ◽

Sol Gel Method ◽

Zirconate Titanate

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Sol-Gel Derived PZT Thick Films with Nano-Sized Microstructure

MRS Proceedings ◽

10.1557/proc-748-u14.9 ◽

2002 ◽

Vol 748 ◽

Cited By ~ 1

Author(s):

C. L. Zhao ◽

Z. H. Wang ◽

W. Zhu ◽

O. K. Tan ◽

H. H. Hng

Keyword(s):

Lead Zirconate Titanate ◽

Electromechanical Coupling ◽

Thick Films ◽

Sol Gel ◽

Essential Element ◽

Processing Parameters ◽

Lead Zirconate ◽

Piezoelectric Response ◽

Coupling Coefficients ◽

Pzt Films

ABSTRACTLead zirconate titanate (PZT) films are promising for acoustic micro-devices applications because of their extremely high electromechanical coupling coefficients and excellent piezoelectric response. Thicker PZT films are crucial for these acoustic applications. A hybrid sol-gel technology has been developed as a new approach to realize simple and cost-effective fabrication of high quality PZT thick films. In this paper, PZT53/47 thick films with a thickness of 5–50 μm are successfully deposited on Pt-coated silicon wafer by using the hybrid sol-gel technology. The obtained PZT thick films are dense, crack-free, and have a nano-sized microstructure. The processing parameters of this technology have been evaluated. The microstructure of the film has been observed using field-emission scanning electron microscopy and the crystallization process has been monitored by the X-ray diffraction. The thick films thus made are good candidates for fabrication of piezoelectric diaphragm which will be an essential element of microspeaker and microphone arrays.

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Sol-gel preparation and characterization of transparent GdTaO 4 : Eu3+thick films

10.1117/12.792574 ◽

2008 ◽

Cited By ~ 1

Author(s):

Kun Han ◽

Mu Gu ◽

Xiaolin Liu ◽

Chen Ni ◽

Shiming Huang ◽

...

Keyword(s):

Thick Films ◽

Sol Gel ◽

Gel Preparation

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DEPOSITION OF PLCT THICK FILMS BY A MODIFIED SOL-GEL PROCESSING

Integrated Ferroelectrics ◽

10.1080/10584580600659456 ◽

2006 ◽

Vol 80 (1) ◽

pp. 253-264

Author(s):

XIAOWU YUAN ◽

DINGQUAN XIAO ◽

ZHAOHUI PU ◽

HONG LIU ◽

JIAGANG WU ◽

...

Keyword(s):

Thick Films ◽

Sol Gel ◽

Gel Processing

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Preparation of Transparent Thick Films by Electrophoretic Sol-Gel Deposition Using Phenyltriethoxysilane-Derived Particles

Journal of the American Ceramic Society ◽

10.1111/j.1151-2916.1998.tb02653.x ◽

2005 ◽

Vol 81 (9) ◽

pp. 2501-2503 ◽

Cited By ~ 37

Author(s):

Kiyofumi Katagiri ◽

Koichi Hasegawa ◽

Atsunori Matsuda ◽

Masahiro Tatsumisago ◽

Tsutomu Minami

Keyword(s):

Thick Films ◽

Sol Gel

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Structural and Dielectric Properties of Screen Printed PZT(70/30) Multilayered Thick Films

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.124-126.663 ◽

2007 ◽

Vol 124-126 ◽

pp. 663-666 ◽

Cited By ~ 2

Author(s):

Sung Gap Lee ◽

Sang Man Park ◽

Young Jae Shim ◽

Young Chul Rhee

Keyword(s):

Screen Printing ◽

Remanent Polarization ◽

Thick Films ◽

Sol Gel ◽

Relative Dielectric Constant ◽

Polycrystalline Structure ◽

Coating Solution ◽

Screen Printing Method ◽

Xrd Patterns ◽

Printing Method

PZT(70/30) powder was prepared by a sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The coating and drying procedure was repeated 4 times. And then the PZT(30/70) precusor solution was spin-coated on the PZT thick films. A concentration of a coating solution was 0.5 mol/L and the number of coating was varied from 0 to 6. The porosity decreased and the grain size increased with increasing the number of coatings. The thickness of the PZT-6(6: number of coatings) films was about 60~65μm. All PZT thick films showed the typical XRD patterns of a typical perovskite polycrystalline structure. The relative dielectric constant of the PZT-6 thick film was 540. The remanent polarization and coercive field of the PZT-6 film were 23.6 μC /cm2, 12.0 kV/cm, respectively.

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Electrooptic Effect in Ti:doped LiNbO3 Thick Films Grown by Sol-Gel Method

IEEJ Transactions on Electronics Information and Systems ◽

10.1541/ieejeiss.124.2401 ◽

2004 ◽

Vol 124 (12) ◽

pp. 2401-2406 ◽

Cited By ~ 1

Author(s):

Koichi Wakita ◽

Shingo Inoue ◽

Ryouhei Otowa ◽

Akira Nishiwaki ◽

Makoto Takahashi ◽

...

Keyword(s):

Thick Films ◽

Sol Gel ◽

Electrooptic Effect ◽

Gel Method ◽

Sol Gel Method

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Erbium- and ytterbium-doped sol–gel SiO2–HfO2 crack-free thick films onto silica on silicon substrate

Journal of Non-Crystalline Solids ◽

10.1016/j.jnoncrysol.2006.03.081 ◽

2006 ◽

Vol 352 (32-35) ◽

pp. 3463-3468 ◽

Cited By ~ 16

Author(s):

Fernando A. Sigoli ◽

Rogéria R. Gonçalves ◽

Younes Messaddeq ◽

Sidney J.L. Ribeiro

Keyword(s):

Silicon Substrate ◽

Thick Films ◽

Sol Gel

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Thickness-Dependent Electrical Properties in Lanthanum-Doped Pzt Thick Films

MRS Proceedings ◽

10.1557/proc-433-325 ◽

1996 ◽

Vol 433 ◽

Cited By ~ 9

Author(s):

H.D. Chen ◽

K.K. Li ◽

C.J. Gaskey ◽

L.E. Cross

Keyword(s):

Lead Zirconate Titanate ◽

Thick Films ◽

Sol Gel ◽

Lead Zirconate ◽

Silicon Substrates ◽

Residual Tensile Stress ◽

Beam Laser ◽

Lanthanum Content ◽

Double Beam ◽

Gel Technique

AbstractLanthanum-doped lead zirconate titanate (PLZT) films, with thickness up to 10 μm, are fabricated on platinized silicon substrates through a modified sol-gel technique. Thicknessdependent piezoelectric properties measured with a double-beam laser interferometer show piezoelectric relaxation in field-induced strain as the ac driving field exceeds 10 kV/cm. In addition, the strain levels of PLZT thick films are approximately one third of those of undoped PZT films under the same fabrication and measurement conditions. For 1 μm PZT(55/45) films doped with 0, 2, and 4 mole% La, the P-E hysteresis exhibits decreasing squareness with increasing lanthanum content while the piezoelectric d33 coefficient reduces from 130 to 52 pC/N. Residual (tensile) stress in these films and resulted depoling effect may be responsible for this phenomenon.

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