Thickness-Dependent Electrical Properties in Lanthanum-Doped Pzt Thick Films

1996 ◽  
Vol 433 ◽  
Author(s):  
H.D. Chen ◽  
K.K. Li ◽  
C.J. Gaskey ◽  
L.E. Cross
Keyword(s):  
Lead Zirconate Titanate ◽  
Thick Films ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Silicon Substrates ◽  
Residual Tensile Stress ◽  
Beam Laser ◽  
Lanthanum Content ◽  
Double Beam ◽  
Gel Technique

AbstractLanthanum-doped lead zirconate titanate (PLZT) films, with thickness up to 10 μm, are fabricated on platinized silicon substrates through a modified sol-gel technique. Thicknessdependent piezoelectric properties measured with a double-beam laser interferometer show piezoelectric relaxation in field-induced strain as the ac driving field exceeds 10 kV/cm. In addition, the strain levels of PLZT thick films are approximately one third of those of undoped PZT films under the same fabrication and measurement conditions. For 1 μm PZT(55/45) films doped with 0, 2, and 4 mole% La, the P-E hysteresis exhibits decreasing squareness with increasing lanthanum content while the piezoelectric d33 coefficient reduces from 130 to 52 pC/N. Residual (tensile) stress in these films and resulted depoling effect may be responsible for this phenomenon.

Sol-Gel Derived PZT Thick Films with Nano-Sized Microstructure

2002 ◽  
Vol 748 ◽  
Author(s):  
C. L. Zhao ◽  
Z. H. Wang ◽  
W. Zhu ◽  
O. K. Tan ◽  
H. H. Hng
Keyword(s):  
Lead Zirconate Titanate ◽  
Electromechanical Coupling ◽  
Thick Films ◽  
Sol Gel ◽  
Essential Element ◽  
Processing Parameters ◽  
Lead Zirconate ◽  
Piezoelectric Response ◽  
Coupling Coefficients ◽  
Pzt Films

ABSTRACTLead zirconate titanate (PZT) films are promising for acoustic micro-devices applications because of their extremely high electromechanical coupling coefficients and excellent piezoelectric response. Thicker PZT films are crucial for these acoustic applications. A hybrid sol-gel technology has been developed as a new approach to realize simple and cost-effective fabrication of high quality PZT thick films. In this paper, PZT53/47 thick films with a thickness of 5–50 μm are successfully deposited on Pt-coated silicon wafer by using the hybrid sol-gel technology. The obtained PZT thick films are dense, crack-free, and have a nano-sized microstructure. The processing parameters of this technology have been evaluated. The microstructure of the film has been observed using field-emission scanning electron microscopy and the crystallization process has been monitored by the X-ray diffraction. The thick films thus made are good candidates for fabrication of piezoelectric diaphragm which will be an essential element of microspeaker and microphone arrays.

Effect of Double Doping in Lead Zirconate Titanate (PZT) Lattices by Sol-Gel Technique for MEMS Applications

2010 ◽  
Vol 121 (1) ◽  
pp. 65-76 ◽  
Author(s):  
S. K. Pandey ◽  
O. P. Thakur ◽  
D. K. Bhattacharya ◽  
Harsh ◽  
Chandra Prakash ◽  
...  
Keyword(s):  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Double Doping ◽  
Zirconate Titanate ◽  
Gel Technique

Preparation of PZT Material with Different Zi/Ti Ratio by Sol-Gel Method

2012 ◽  
Vol 238 ◽  
pp. 105-108 ◽  
Author(s):  
Xi Chen
Keyword(s):  
Lead Zirconate Titanate ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Synthesis Temperature ◽  
X Ray Diffraction ◽  
Pure Perovskite Phase ◽  
Gel Technique ◽  
Relationship Of ◽  
The Relationship

Lead zirconate titanate powders (PZT) with different Zi/Ti values 52/48, 53/47, 54/46 and 55/45 were prepared by sol-gel technique. The sol was prepared by mixing stable solutions of Zr-nitrate, Pb-acetate and Ti (OC4H9)4 precursors. The decomposition of precursors above 773 K, 923 K and 1073 K for Zi/Ti value equls to 52/48; 53/47 and 54/46; 55/45 leads to the formation of pure perovskite phase, respectively. X-ray diffraction analysis was carried out to confirm the phase formation of PZT. The relationship of synthesis temperature and Zi/Ti ratio value is disscused and it is found that higher synthesis temperature is needed to prepare pure PZT with increasing Zi/Ti ratio.

Electrical Properties of Amorphous Thin Films of Ferroelectric Oxides Prepared by Sol-Gel Technique

1993 ◽  
Vol 310 ◽  
Author(s):  
Yuhuan Xu ◽  
Ren Xu ◽  
Chih-Hsing Cheng ◽  
John D. Mackenzie
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Ferroelectric Thin Films ◽  
Amorphous Thin Films ◽  
Crystalline Films ◽  
Gel Technique ◽  
Ferroelectric Oxides

AbstractAmorphous thin films of ferroelectric oxides including lead zirconate titanate (PZT), barium titanate (BaTiO3) and lithium niobate (LiNbO3) on several kinds of substrates were prepared by a sol-gel technique. The heat-treatment temperatures for preparation of amorphous thin films were much lower than those for the corresponding crystalline ferroelectric thin films. Electrical properties of these amorphous thin films were measured and compared with those of corresponding crystalline films. These amorphous thin films exhibited ferroelectric-like behavior. A model of the microstructure of these films is proposed.

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