Sol-Gel Derived PZT Thick Films with Nano-Sized Microstructure

2002 ◽  
Vol 748 ◽  
Author(s):  
C. L. Zhao ◽  
Z. H. Wang ◽  
W. Zhu ◽  
O. K. Tan ◽  
H. H. Hng
Keyword(s):  
Lead Zirconate Titanate ◽  
Electromechanical Coupling ◽  
Thick Films ◽  
Sol Gel ◽  
Essential Element ◽  
Processing Parameters ◽  
Lead Zirconate ◽  
Piezoelectric Response ◽  
Coupling Coefficients ◽  
Pzt Films

ABSTRACTLead zirconate titanate (PZT) films are promising for acoustic micro-devices applications because of their extremely high electromechanical coupling coefficients and excellent piezoelectric response. Thicker PZT films are crucial for these acoustic applications. A hybrid sol-gel technology has been developed as a new approach to realize simple and cost-effective fabrication of high quality PZT thick films. In this paper, PZT53/47 thick films with a thickness of 5–50 μm are successfully deposited on Pt-coated silicon wafer by using the hybrid sol-gel technology. The obtained PZT thick films are dense, crack-free, and have a nano-sized microstructure. The processing parameters of this technology have been evaluated. The microstructure of the film has been observed using field-emission scanning electron microscopy and the crystallization process has been monitored by the X-ray diffraction. The thick films thus made are good candidates for fabrication of piezoelectric diaphragm which will be an essential element of microspeaker and microphone arrays.

Electrical and Optical Properties of Sol-Gel Processed Pb(Zr,Ti)o3 Films

1992 ◽  
Vol 271 ◽  
Author(s):  
S. D. Ramamurthi ◽  
S. L. Swartz ◽  
K. R. Marken ◽  
J. R. Busch ◽  
V. E. Wood Battelle
Keyword(s):  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Optical Characterization ◽  
Solvent System ◽  
Processing Parameters ◽  
Lead Zirconate ◽  
Electrical And Optical Properties ◽  
Annealing Conditions ◽  
Electro Optic ◽  
Pzt Films

ABSTRACTLead-zirconate-titanate, Pb(Zr0.53Ti0.47)O3, films were produced by the sol-gel method from alkoxide and acetate precursors in a 2-methoxyethanol solvent system. The PZT films were deposited on platinized silicon and single-crystal SrTiO3 substrates for electrical and optical characterization, respectively. The processing parameters, especially excess PbO content and annealing conditions, were shown to have a significant effects on the properties of PZT films. Epitaxial PZT films deposited on SrTiO3 waveguided over 10 mm distances with propagation losses as low as 5.9 dB/cm at 783 nm and a linear electro-optic effect was also demonstrated.

Wet-Etch Patterning of Lead Zirconate Titanate (PZT) Thick Films for Microelectromechanical Systems (MEMS) Applications

2000 ◽  
Vol 657 ◽  
Author(s):  
L.-P. Wang ◽  
R. Wolf ◽  
Q. Zhou ◽  
S. Trolier-McKinstry ◽  
R. J. Davis
Keyword(s):  
Lead Zirconate Titanate ◽  
Electromechanical Coupling ◽  
Microelectromechanical Systems ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Metal Fluoride ◽  
Zirconate Titanate ◽  
Pzt Films ◽  
High Etch Rate ◽  
Wet Etch

ABSTRACTLead zirconate titanate (PZT) films are very attractive for microelectromechanical systems (MEMS) applications because of their high piezoelectric coefficients and good electromechanical coupling. In this work, wet-etch patterning of sol-gel PZT films for MEMS applications, typically with film thicknesses ranging from 2 to 10 microns, was studied. A two- step wet-etch process was developed. In the first step, 10:1 buffered HF is used to remove the majority of the film at room temperature. Then a solution of 2HCl:H2O at 45°C is used to remove metal-fluoride residues remaining from the first step. This enabled successful patterning of PZT films up to 8 microns thick. A high etch rate (0.13μm/min), high selectivity with respect to photoresist, and limited undercutting (2:1 lateral:thickness) were obtained. The processed PZT films have a relative permittivity of 1000, dielectric loss of 1.6%, remanent polarization (Pr) of 24μC/cm2, and coercive field (Ec) of 42.1kV/cm, all similar to those of unpatterned films of the same thickness.

Effect of Processing Conditions on the Piezoelectric Properties of Sol-gel Derived Pb(Zr,Ti)O3 Films for Micromechanical Applications

2005 ◽  
Vol 20 (6) ◽  
pp. 1428-1435 ◽  
Author(s):  
J. Pérez ◽  
P.M. Vilarinho ◽  
A.L. Kholkin ◽  
J. Manuel Herrero ◽  
C. Zaldo
Keyword(s):  
Lead Zirconate Titanate ◽  
Annealing Temperature ◽  
Piezoelectric Properties ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Piezoelectric Response ◽  
Preparation Conditions ◽  
Sol Gel Process ◽  
Pzt Films ◽  
Interface Effects

Lead zirconate titanate (PZT) films of composition close to the morphotropic phase boundary were deposited onto standard Si/SiO2/Ti/Pt substrates using a modified sol-gel process. The preparation conditions were optimized to obtain high-quality films at sufficiently low temperature (Ta - 500 °C). The dielectric, ferroelectric, and piezoelectric properties of the films were then measured as a function of the annealing temperature and the number of distillations to evaluate their suitability for micromechanical applications. The maximum values of the longitudinal charge and voltage piezoelectric coefficients were d33 ∼ 65 pm/V and g33 ∼ 4 × 10−3 Vm/N, respectively. The results indicate that the piezoelectric properties improved and became saturated with increasing number of distillations and are almost independent on Ta. Only moderate decrease of the piezoelectric response with frequency suggests that the investigated PZT films can be used in high-frequency piezoelectric applications. The results are discussed in terms of the microstructure and interface effects on the piezoelectric deformation in ferroelectric thin films.

Intermetallic Formation in PZT for MEMS Structures

2012 ◽  
Vol 1427 ◽  
Author(s):  
Kanu priya Sharma ◽  
Thomas Oseroff ◽  
Leda Lunardi
Keyword(s):  
Electron Microscopy ◽  
Lead Zirconate Titanate ◽  
Surface Film ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Mems Devices ◽  
Aging Effects ◽  
Force Microscopy ◽  
Transmission Electron ◽  
Pzt Films

ABSTRACTCrack free lead zirconate titanate (PZT) films for piezoelectric based MEMS devices have been prepared by a multiple coating sol gel process on platinized silicon (100) substrates. Rapid thermal annealing and Conventional furnace annealing were used for densification and crystallization of the amorphous PZT films. Scanning electron microscopy (SEM), Transmission electron microscopy (TEM) and Atomic force microscopy (AFM) were used to observe surface film morphology and grain growth. The phase content of the films was analyzed using X-ray diffraction. The role of intermetallics formed during the heat treatment in the growth of different orientations has also been observed. Film aging critical for device performance has been observed and methods to revert aging effects have been examined and discussed.

Fabrication of Thick, Sol Gel Pzt Films: Applications to Macroscopic Piezoelectric Devices

1994 ◽  
Vol 360 ◽  
Author(s):  
D.A. Barrow ◽  
T.E. Petroff ◽  
M. Sayer
Keyword(s):  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Low Frequency ◽  
Lead Zirconate ◽  
Resonant Vibrations ◽  
Pzt Film ◽  
Sol Gel Process ◽  
Pzt Films ◽  
High Frequency Resonance ◽  
Piezoelectric Devices

AbstractLead zirconate titanate (PZT) films of up to 60 μm in thickness have been fabricated on a wide variety of substrates using a new sol gel process. The dielectric properties (∈ = 900), ferroelectric (Ec = 16 kV/cm and Pr = 35 μC/cm 2) and piezoelectric properties are comparable to bulk values. The characteristic Curie point of these films is at 420 °C. Piezoelectric actuators have been developed by depositing thick PZT films on both planar and coaxial substrates. Stainless steel cantilevers and optical fibres coated with a PZT film exhibit flexure mode resonant vibrations observable with the naked eye. A low frequency in-line fibre optic modulator has been developed using a PZT coated optical fibre. The high frequency resonance of a 60 μm film on a aluminum substrate has been observed.

Thickness-Dependent Electrical Properties in Lanthanum-Doped Pzt Thick Films

1996 ◽  
Vol 433 ◽  
Author(s):  
H.D. Chen ◽  
K.K. Li ◽  
C.J. Gaskey ◽  
L.E. Cross
Keyword(s):  
Lead Zirconate Titanate ◽  
Thick Films ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Silicon Substrates ◽  
Residual Tensile Stress ◽  
Beam Laser ◽  
Lanthanum Content ◽  
Double Beam ◽  
Gel Technique

AbstractLanthanum-doped lead zirconate titanate (PLZT) films, with thickness up to 10 μm, are fabricated on platinized silicon substrates through a modified sol-gel technique. Thicknessdependent piezoelectric properties measured with a double-beam laser interferometer show piezoelectric relaxation in field-induced strain as the ac driving field exceeds 10 kV/cm. In addition, the strain levels of PLZT thick films are approximately one third of those of undoped PZT films under the same fabrication and measurement conditions. For 1 μm PZT(55/45) films doped with 0, 2, and 4 mole% La, the P-E hysteresis exhibits decreasing squareness with increasing lanthanum content while the piezoelectric d33 coefficient reduces from 130 to 52 pC/N. Residual (tensile) stress in these films and resulted depoling effect may be responsible for this phenomenon.

Rapid Thermal Processing of Ferroelectric Thin Films

1991 ◽  
Vol 224 ◽  
Author(s):  
Zheng Wu ◽  
Roberto Pascual ◽  
C.V.R. Vasant Kumar ◽  
David Amd ◽  
Michael Sayer
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Thermal Processing ◽  
Crystallization Behavior ◽  
Sol Gel ◽  
Rapid Thermal Processing ◽  
Lead Zirconate ◽  
Dielectric Constants ◽  
Heating Rates ◽  
Pzt Films

AbstractThe preparation of ferroelectric lead zirconate titanate (PZT) thin films by rapid thermal processing (RTP) is reported. The films were deposited by chemical sol gel and physical sputter techniques. The heating rate of RTP was found to have significant influence on the crystallization behavior. Faster heating rates lead to lowering of the crystallization temperature and reduction of grain size. PZT films were obtained with dielectric constants ~ 1000, remanent polarizations between 20 and 30μC/cm2, coercive fields 20 to 60kV/cm, and no significant fatigue for 109 to 1010 stressing cycles.

EFFECT OF PRE-HEATING TEMPERATURE ON THE CHARACTERISTICS OF PZT THIN FILMS GROWN BY USING A TRIOL SOL–GEL ROUTE

2007 ◽  
Vol 14 (02) ◽  
pp. 229-234
Author(s):  
SARAWUT THOUNTOM ◽  
MANOCH NAKSATA ◽  
KENNETH MACKENZIE ◽  
TAWEE TUNKASIRI
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Heating Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
Pzt Thin Films ◽  
Pzt Films ◽  
Ferroelectric Hysteresis

Lead zirconate titanate (PZT) films with compositions near the morphotropic phase boundary were fabricated on Pt (111)/ Ti / SiO 2/ Si (100) using the triol sol–gel method. The effect of the pre-heating temperature on the phase transformations, microstructures, electrical properties, and ferroelectric properties of the PZT thin films was investigated. Randomly oriented PZT thin films pre-heated at 400°C for 10 min and annealed at 600°C for 30 min showed well-defined ferroelectric hysteresis loops with a remnant polarization of 26.57 μC/cm2 and a coercive field of 115.42 kV/cm. The dielectric constant and dielectric loss of the PZT films were 621 and 0.0395, respectively. The microstructures of the thin films are dense, crack-free, and homogeneous with fine grains about 15–20 nm in size.

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