Improvement in light output intensity of InGaN/GaN multiple-quantum-well blue light-emitting diode by SiO2/Si3N4 distributed Bragg reflectors and silver back mirror

2011 ◽  
Vol 519 (10) ◽  
pp. 3363-3367 ◽  
Author(s):  
Po-Hsun Lei
Keyword(s):  
Quantum Well ◽  
Blue Light ◽  
Light Emitting Diode ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Multiple Quantum ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Output Intensity ◽  
Light Emitting

Optimizing the multiple quantum well thickness of an InGaN blue light emitting diode

2013 ◽  
Author(s):  
Bing Xu ◽  
Jun Liang Zhao ◽  
Shu Guo Wang ◽  
Hai Tao Dai ◽  
Sheng-Fu Yu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Blue Light ◽  
Light Emitting Diode ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Light Emitting

Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Localized States ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Light Emitting ◽  
Temperature Range ◽  
Green Leds

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.

High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer

2003 ◽  
Vol 42 (Part 2, No. 3A) ◽  
pp. L226-L228 ◽  
Author(s):  
Baijun Zhang ◽  
Takashi Egawa ◽  
Hiroyasu Ishikawa ◽  
Yang Liu ◽  
Takashi Jimbo
Keyword(s):  
Quantum Well ◽  
Buffer Layer ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Algan Buffer

Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures with Indium-Rich Clusters

2018 ◽  
Vol 215 (23) ◽  
pp. 1800455 ◽  
Author(s):  
Yulin Meng ◽  
Lianshan Wang ◽  
Guijuan Zhao ◽  
Fangzheng Li ◽  
Huijie Li ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diode ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Red Emission ◽  
Light Emitting
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