Electrical characteristics of a ZrO2/SiO2 modified tunnel barrier for low-temperature non-volatile memory

2011 ◽  
Vol 519 (10) ◽  
pp. 3397-3400 ◽  
Author(s):  
Hee-Wook You ◽  
Won-Ju Cho
2016 ◽  
Vol 213 (9) ◽  
pp. 2446-2451 ◽  
Author(s):  
Klemens Ilse ◽  
Thomas Schneider ◽  
Johannes Ziegler ◽  
Alexander Sprafke ◽  
Ralf B. Wehrspohn

RSC Advances ◽  
2015 ◽  
Vol 5 (12) ◽  
pp. 8566-8570 ◽  
Author(s):  
Jim-Long Her ◽  
Fa-Hsyang Chen ◽  
Ching-Hung Chen ◽  
Tung-Ming Pan

In this study, we report the structural and electrical characteristics of high-κ Sm2O3 and SmTiO3 charge trapping layers on an indium–gallium–zinc oxide (IGZO) thin-film transistor (TFT) for non-volatile memory device applications.


Author(s):  
G. Tallarida ◽  
N. Huby ◽  
B. Kutrzeba-Kotowska ◽  
S. Spiga ◽  
M. Arcari ◽  
...  

2009 ◽  
Vol 19 (10) ◽  
pp. 1587-1593 ◽  
Author(s):  
Myoung-Jae Lee ◽  
Sun I. Kim ◽  
Chang B. Lee ◽  
Huaxiang Yin ◽  
Seung-Eon Ahn ◽  
...  

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