2009 IEEE International Memory Workshop
Latest Publications

TOTAL DOCUMENTS

44
(FIVE YEARS 0)

H-INDEX

9
(FIVE YEARS 0)

Published By IEEE

9781424437627
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

An In-Depth Investigation of Physical Mechanisms Governing SANOS Memories Characteristics

2009 ◽  
Author(s):  
M. Bocquet ◽  
E. Vianello ◽  
G. Molas ◽  
L. Perniola ◽  
H. Grampeix ◽  
...  
Keyword(s):  
Physical Mechanisms

Multi-Level Operation of Fully CMOS Compatible WOX Resistive Random Access Memory (RRAM)

2009 ◽  
Author(s):  
W. C. Chien ◽  
Y. C. Chen ◽  
K. P. Chang ◽  
E. K. Lai ◽  
Y. D. Yao ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Multi Level ◽  
Cmos Compatible

Performance and Reliability of Si-Nanocrystal Double Layer Memory Devices with High-k Control Dielectrics

2009 ◽  
Author(s):  
G. Gay ◽  
G. Molas ◽  
M. Bocquet ◽  
E. Jalaguier ◽  
M. Gely ◽  
...  
Keyword(s):  
Double Layer ◽  
Memory Devices ◽  
High K ◽  
Si Nanocrystal

Both NOR and NAND Embedded Hybrid Flash for S-SIM Application Using 90 nm Process Technology

2009 ◽  
Author(s):  
Jeong-Uk Han ◽  
Yong Kyu Lee ◽  
Chang Min Jeon ◽  
Jido Ryu ◽  
Eun-Mi Hong ◽  
...  
Keyword(s):  
Process Technology

FDSOI Floating Body Cell eDRAM Using Gate-Induced Drain-Leakage (GIDL) Write Current for High Speed and Low Power Applications

2009 ◽  
Author(s):  
Sophie Puget ◽  
Germain Bossu ◽  
Claire Fenouiller-Beranger ◽  
Pierre Perreau ◽  
Pascal Masson ◽  
...  
Keyword(s):  
Low Power ◽  
High Speed ◽  
Floating Body ◽  
Body Cell

Relaxation Oscillation in GST-Based Phase Change Memory Devices

2009 ◽  
Author(s):  
D. C. S. Jackson ◽  
M. Nardone ◽  
V. Karpov ◽  
I. Karpov
Keyword(s):  
Phase Change ◽  
Relaxation Oscillation ◽  
Phase Change Memory ◽  
Memory Devices ◽  
Change Memory

Comparative Assessment of GST and GeTe Materials for Application to Embedded Phase-Change Memory Devices

2009 ◽  
Author(s):  
A. Fantini ◽  
L. Perniola ◽  
M. Armand ◽  
J. F. Nodin ◽  
V. Sousa ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Comparative Assessment ◽  
Memory Devices ◽  
Change Memory

Low Temperature Rectifying Junctions for Crossbar Non-Volatile Memory Devices

2009 ◽  
Author(s):  
G. Tallarida ◽  
N. Huby ◽  
B. Kutrzeba-Kotowska ◽  
S. Spiga ◽  
M. Arcari ◽  
...  
Keyword(s):  
Low Temperature ◽  
Memory Devices ◽  
Non Volatile Memory ◽  
Volatile Memory
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