Dependency of Electrical Characteristics on Au Nano-Crystal Size for Non-Volatile Memory Fabricated with Au Nano-Crystal Embedded in PVK(Poly(N-Vinylcarbazole)) Layer

2007 ◽  
pp. 33-36
Author(s):  
Chang Kyu Lee ◽  
Jong Sung Kwon ◽  
In Chul Na ◽  
Byung Il Han ◽  
Young Min Kim ◽  
...  
Keyword(s):  
Crystal Size ◽  
Electrical Characteristics ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Nano Crystal

Dependency of Electrical Characteristics on Au Nano-Crystal Size for Non-Volatile Memory Fabricated with Au Nano-Crystal Embedded in PVK(Poly(N-Vinylcarbazole)) Layer

2007 ◽  
Vol 124-126 ◽  
pp. 33-36
Author(s):  
Chang Kyu Lee ◽  
Jong Sung Kwon ◽  
In Chul Na ◽  
Byung Il Han ◽  
Young Min Kim ◽  
...  
Keyword(s):  
Uniform Distribution ◽  
Layer Thickness ◽  
Nonvolatile Memory ◽  
Crystal Size ◽  
Electrical Characteristics ◽  
Device Structure ◽  
Switching Characteristic ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Nano Crystal

We demonstrated a nonvolatile memory fabricated with the sandwich device structure of Al/Au nano-crystals embedded in the PVK/Al. The bi-stable conduction switching characteristic (Ion/Ioff ratio) was >1x102, depending on Au nano-crystal size. The size and distribution of Au nano-crystals were determined by the inserted Au-layer thickness between PVK layers. The size of Au nano-crystals increased with the inserted Au-layer thickness. The uniform distribution of isolated Au nano-crystals was obtained with 5 nm of the inserted Au-layer thickness.

Electrical characteristics of gallium–indium–zinc oxide thin-film transistor non-volatile memory with Sm2O3 and SmTiO3 charge trapping layers

RSC Advances ◽  
2015 ◽  
Vol 5 (12) ◽  
pp. 8566-8570 ◽  
Author(s):  
Jim-Long Her ◽  
Fa-Hsyang Chen ◽  
Ching-Hung Chen ◽  
Tung-Ming Pan
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Charge Trapping ◽  
Memory Device ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Electrical Characteristics ◽  
Non Volatile Memory ◽  
Volatile Memory

In this study, we report the structural and electrical characteristics of high-κ Sm2O3 and SmTiO3 charge trapping layers on an indium–gallium–zinc oxide (IGZO) thin-film transistor (TFT) for non-volatile memory device applications.

Manipulation of electrical characteristics of non-volatile transistor-type memory devices through the acceptor strength of donor–acceptor conjugated copolymers

2016 ◽  
Vol 4 (24) ◽  
pp. 5702-5708 ◽  
Author(s):  
Chien Lu ◽  
Wen-Ya Lee ◽  
Wen-Chang Chen
Keyword(s):  
Electron Mobility ◽  
Memory Devices ◽  
Electrical Characteristics ◽  
Non Volatile Memory ◽  
Donor Acceptor ◽  
Volatile Memory ◽  
Conjugated Copolymers

The acceptor strength of a donor–acceptor copolymer manipulates not only the electron mobility but also the memory behavior of polymer-based non-volatile memory devices.

Electrical Characteristics of Ge-Nanocrystal Embedded MOS Capacitors for Non-Volatile-Memory Application

2019 ◽  
Vol 3 (2) ◽  
pp. 449-455
Author(s):  
Sam-Jong Choi ◽  
Young-Soo Park ◽  
Kyoo-Chul Cho ◽  
Taesoo Kang ◽  
Tae-Sung Kim ◽  
...  
Keyword(s):  
Electrical Characteristics ◽  
Mos Capacitors ◽  
Non Volatile Memory ◽  
Volatile Memory

Effect of Au Nanocrystals Embedded in Conductive Polymer on Non-volatile Memory Window

2008 ◽  
Vol 1071 ◽  
Author(s):  
Hyun Min Seung ◽  
Jong Dae Lee ◽  
Byeong-Il Han ◽  
Gon-Sub Lee ◽  
Jea-Gun Park
Keyword(s):  
Oxide Layer ◽  
Negative Differential Resistance ◽  
Metal Structure ◽  
Differential Resistance ◽  
Polymer Layer ◽  
Current Path ◽  
Non Volatile Memory ◽  
Polymer Metal ◽  
Volatile Memory ◽  
Nano Crystal

AbstractRecently, non-volatile polymer memories have been researched as a next generation of non-volatile memory because of its simple structure and easy fabrication process. We found that two types of non-volatile polymer memory have different I-V behavior. First Polymer non-volatile memory with metal / oxide / polymer / metal structure But Polymer non-volatile memory embedded Au Nano-crystal shows different I-V behavior. Polymer non-volatile memory shows NDR(Negative Differential Resistance) Region after threshold voltage and low to high current path at increasing positive and negative bias. We can observe NDR(Negative Differential Resistance) Region on Polymer non-volatile memory embedded Au Nano crystal. We fabricated devices three different type to confirm difference Polymer non-volatile memory with metal / polymer / metal structure, metal / oxide / polymer / metal structure and Au nano-crystal embedded Polymer non-volatile memory. First we fabricated Polymer non-volatile memory with metal / PVK(Poly-n-vinyl carbarzole) / metal structure. first type of device shows ohmic I-V behavior. Second type of polymer non-volatile memory has oxide layer between metal and polymer layer. Oxide layer made by O2 plasma treatment(100W RF power, 100SCCM O2 gas flow) after metal layer deposited. Second type of device has same structure as first device except oxide layer. Second type of device shows I-V behavior similar to Resistive Memory. Resistive non-volatile memory shows low to high current path at increasing positive bias and high to low current path at increasing negative bias. I-V behaviors of second device due to effect of oxide layer between metal and polymer layer. Third type of polymer non-volatile memory we embed Au nano-crystal layer in polymer layer. Au nano-crystal layer embedded by curing process. We deposit 5nm Au layer after spin coated PVK(Poly-n-vinyl carbarzole) layer and curing at 300¡É. We can observe NDR(Negative Differential Resistance) Region and different I-V behaviors with other type of device. Finally we fabricated polymer non-volatile memory embedded au nano-crystal by dispersion method to confirm effect of au nano-crystal. We report difference I-V behaviors polymer non-volatile memory with metal / polymer / metal structure and polymer non-volatile memory embedded au nano-crystals

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