2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046)

Swift heavy ion irradiation induced modification of current-voltage characteristics of heavily doped Au/n-GaAs Schottky diode

2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046) ◽

10.1109/sim.2000.939220 ◽

2002 ◽

Author(s):

R. Singh ◽

S.K. Arora ◽

J.P. Singh ◽

F. Singh ◽

D. Kanjilal

Keyword(s):

Schottky Diode ◽

Ion Irradiation ◽

Heavy Ion ◽

Swift Heavy Ion Irradiation ◽

Heavy Ion Irradiation ◽

Swift Heavy Ion ◽

Current Voltage ◽

Heavily Doped ◽

Current Voltage Characteristics

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Transmission electron microscopy investigation of semiconductor quantum dots

2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046) ◽

10.1109/sim.2000.939230 ◽

2002 ◽

Author(s):

X.Z. Liao ◽

J. Zou ◽

D.J.H. Cockayne

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Quantum Dots ◽

Semiconductor Quantum Dots ◽

Transmission Electron Microscopy Investigation ◽

Transmission Electron ◽

Microscopy Investigation ◽

Electron Microscopy Investigation

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Ion implantation into GaN: opportunities and problems

2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046) ◽

10.1109/sim.2000.939195 ◽

2002 ◽

Author(s):

S.O. Kucheyev ◽

J.S. Williams ◽

C. Jagadish ◽

J. Zou ◽

M. Toth ◽

...

Keyword(s):

Ion Implantation

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Majority carrier accumulation in low-temperature-grown GaAs layer inserted into n-and p-type matrices

2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046) ◽

10.1109/sim.2000.939211 ◽

2002 ◽

Author(s):

P.N. Brunkov ◽

V.V. Chaldyshev ◽

A.V. Chernigovskii ◽

A.A. Suvorova ◽

N.A. Bert ◽

...

Keyword(s):

Low Temperature ◽

Gaas Layer ◽

Majority Carrier ◽

P Type ◽

Low Temperature Grown Gaas

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The electrical characteristics of metal-ferroelectric (PbZr/sub x/Ti/sub 1-x/O/sub 3/)-insulator(Ta/sub 2/O/sub 5/)-silicon structure for non-volatile memory applications

2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046) ◽

10.1109/sim.2000.939259 ◽

2002 ◽

Author(s):

Chi-Yuan Sze ◽

J.Y. Lee

Keyword(s):

Electrical Characteristics ◽

Silicon Structure ◽

Non Volatile Memory ◽

Volatile Memory ◽

Memory Applications

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On the physical parameters and crystal defects of bulk semi-insulating InP for radiation detector fabrication

2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046) ◽

10.1109/sim.2000.939223 ◽

2002 ◽

Author(s):

D. Korytar ◽

C. Ferrari ◽

B. Surma ◽

S. Strzelecka ◽

F. Dubecky ◽

...

Keyword(s):

Radiation Detector ◽

Crystal Defects ◽

Physical Parameters

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Characterisation of indium phosphide using terahertz radiation

2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046) ◽

10.1109/sim.2000.939206 ◽

2002 ◽

Cited By ~ 2

Author(s):

R.L. Causley ◽

R.A. Lewis

Keyword(s):

Indium Phosphide ◽

Terahertz Radiation

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Population inversion in an optically-pumped single quantum well

2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046) ◽

10.1109/sim.2000.939231 ◽

2002 ◽

Author(s):

T.J. Green ◽

W. Xu

Keyword(s):

Quantum Well ◽

Population Inversion ◽

Single Quantum ◽

Optically Pumped ◽

Single Quantum Well

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Temporal response modeling of metal-semiconductor-metal photodetector

2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046) ◽

10.1109/sim.2000.939208 ◽

2002 ◽

Author(s):

S. Averine ◽

Y.C. Chan ◽

S.L. Ng ◽

R. Sachot ◽

Y.L. Lam

Keyword(s):

Temporal Response ◽

Metal Semiconductor Metal ◽

Response Modeling

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Residual donors in undoped LEC InP

2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046) ◽

10.1109/sim.2000.939222 ◽

2002 ◽

Author(s):

Y.W. Zhao ◽

N.F. Sun ◽

T.N. Sun ◽

Lanying Lin ◽

Xiawan Wu ◽

...

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2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Swift heavy ion irradiation induced modification of current-voltage characteristics of heavily doped Au/n-GaAs Schottky diode

Transmission electron microscopy investigation of semiconductor quantum dots

Ion implantation into GaN: opportunities and problems

Majority carrier accumulation in low-temperature-grown GaAs layer inserted into n-and p-type matrices

The electrical characteristics of metal-ferroelectric (PbZr/sub x/Ti/sub 1-x/O/sub 3/)-insulator(Ta/sub 2/O/sub 5/)-silicon structure for non-volatile memory applications

On the physical parameters and crystal defects of bulk semi-insulating InP for radiation detector fabrication

Characterisation of indium phosphide using terahertz radiation

Population inversion in an optically-pumped single quantum well

Temporal response modeling of metal-semiconductor-metal photodetector

Residual donors in undoped LEC InP

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2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Swift heavy ion irradiation induced modification of current-voltage characteristics of heavily doped Au/n-GaAs Schottky diode

Transmission electron microscopy investigation of semiconductor quantum dots

Ion implantation into GaN: opportunities and problems

Majority carrier accumulation in low-temperature-grown GaAs layer inserted into n-and p-type matrices

The electrical characteristics of metal-ferroelectric (PbZr/sub x/Ti/sub 1-x/O/sub 3/)-insulator(Ta/sub 2/O/sub 5/)-silicon structure for non-volatile memory applications

On the physical parameters and crystal defects of bulk semi-insulating InP for radiation detector fabrication

Characterisation of indium phosphide using terahertz radiation

Population inversion in an optically-pumped single quantum well

Temporal response modeling of metal-semiconductor-metal photodetector

Residual donors in undoped LEC InP

2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046)
Latest Publications