Improvement of bias stability of indium zinc oxide thin film transistors by the incorporation of hafnium fabricated by radio-frequency magnetron sputtering
2008 ◽
Vol 47
(1)
◽
pp. 87-90
◽
2010 ◽
Vol 31
(5)
◽
pp. 440-442
◽
Keyword(s):
2013 ◽
Vol 50
(7)
◽
pp. 115-121
2007 ◽
Vol 16
(5)
◽
pp. 359-365
◽
2013 ◽
Vol 34
(7)
◽
pp. 894-896
◽
Keyword(s):
Keyword(s):
2007 ◽
Vol 51
(6)
◽
pp. 1999
◽
2014 ◽
Vol 14
(11)
◽
pp. 8163-8166
◽
Keyword(s):