Characteristics of Gallium-Doped Zinc Oxide Thin-Film Transistors Fabricated at Room Temperature Using Radio Frequency Magnetron Sputtering Method

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.87 ◽

2008 ◽

Vol 47 (1) ◽

pp. 87-90 ◽

Author(s):

Hoonha Jeon ◽

Ved Prakash Verma ◽

Sookhyun Hwang ◽

Sooyeon Lee ◽

Chiyoung Park ◽

...

Keyword(s):

Thin Film ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Thin Film Transistors ◽

Room Temperature ◽

Radio Frequency Magnetron ◽

Oxide Thin Film ◽

Radio Frequency Magnetron Sputtering ◽

Zinc Oxide Thin Film

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Fabrication and Characteristics of Zinc Oxide- and Gallium doped Zinc Oxide thin film transistor using Radio Frequency Magnetron sputtering at Room Temperature

Applied Science and Convergence Technology ◽

10.5757/jkvs.2007.16.5.359 ◽

2007 ◽

Vol 16 (5) ◽

pp. 359-365 ◽

Author(s):

Hoon-Ha Jeon ◽

Ved Prakash Verma ◽

Kyoung-Seok Noh ◽

Do-Hyun Kim ◽

Won-Bong Choi ◽

...

Keyword(s):

Thin Film ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Room Temperature ◽

Thin Film Transistor ◽

Radio Frequency Magnetron ◽

Oxide Thin Film ◽

Radio Frequency Magnetron Sputtering ◽

Zinc Oxide Thin Film

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High-performance transparent Li-doped indium-tin-zinc-oxide thin film transistor fabricated by radio frequency magnetron sputtering method

Materials Letters ◽

10.1016/j.matlet.2018.07.098 ◽

2018 ◽

Vol 230 ◽

pp. 132-134 ◽

Author(s):

Ran Li ◽

Shiqian Dai ◽

Yaobin Ma ◽

Longjie Tian ◽

Qi Wang ◽

...

Keyword(s):

Thin Film ◽

Magnetron Sputtering ◽

Radio Frequency ◽

High Performance ◽

Thin Film Transistor ◽

Radio Frequency Magnetron ◽

Oxide Thin Film ◽

Radio Frequency Magnetron Sputtering ◽

Zinc Oxide Thin Film

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Improvement of bias stability of indium zinc oxide thin film transistors by the incorporation of hafnium fabricated by radio-frequency magnetron sputtering

Thin Solid Films ◽

10.1016/j.tsf.2011.04.044 ◽

2011 ◽

Vol 519 (20) ◽

pp. 6881-6883 ◽

Author(s):

Eugene Chong ◽

Yoon Soo Chun ◽

Seung Han Kim ◽

Sang Yeol Lee

Keyword(s):

Thin Film ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Radio Frequency Magnetron Sputtering ◽

Zinc Oxide Thin Film ◽

Indium Zinc Oxide ◽

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Low-Voltage Zinc-Oxide Thin-Film Transistors on a Conventional SiO2 Gate Insulator Grown by Radio-Frequency Magnetron Sputtering at Room Temperature

Journal of the Korean Physical Society ◽

10.3938/jkps.51.1999 ◽

2007 ◽

Vol 51 (6) ◽

pp. 1999 ◽

Author(s):

Hoonha Jeon ◽

Kyoungseok Noh ◽

Do-Hyun Kim ◽

Minhyon Jeon ◽

Ved Prakash Verma ◽

...

Keyword(s):

Thin Film ◽

Magnetron Sputtering ◽

Thin Film Transistors ◽

Room Temperature ◽

Low Voltage ◽

Gate Insulator ◽

Oxide Thin Film ◽

Radio Frequency Magnetron Sputtering ◽

Zinc Oxide Thin Film

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Relation between the plasma characteristics and physical properties of functional zinc oxide thin film prepared by radio frequency magnetron sputtering process

Thin Solid Films ◽

10.1016/j.tsf.2009.07.181 ◽

2010 ◽

Vol 518 (8) ◽

pp. 1953-1957 ◽

Author(s):

Che-Wei Hsu ◽

Tsung-Chieh Cheng ◽

Wen-Hsien Huang ◽

Jong-Shinn Wu ◽

Cheng-Chih Cheng ◽

...

Keyword(s):

Thin Film ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Physical Properties ◽

Radio Frequency Magnetron ◽

Oxide Thin Film ◽

Radio Frequency Magnetron Sputtering ◽

Zinc Oxide Thin Film ◽

Plasma Characteristics

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Room-temperature fabrication of bilayer InZnO:Li/MgZnO:Li thin film transistors using radio frequency magnetron sputtering

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/aac60c ◽

2018 ◽

Vol 51 (25) ◽

pp. 255105 ◽

Author(s):

Longjie Tian ◽

Yaobin Ma ◽

Qi Wang ◽

Ran Li ◽

Shiqian Dai ◽

...

Keyword(s):

Thin Film ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Thin Film Transistors ◽

Room Temperature ◽

Radio Frequency Magnetron ◽

Radio Frequency Magnetron Sputtering

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A room temperature process for the fabrication of amorphous indium gallium zinc oxide thin-film transistors with co-sputtered ZrxSi1−xO2Gate dielectric and improved electrical and hysteresis performance

Japanese Journal of Applied Physics ◽

10.7567/jjap.56.04cg06 ◽

2017 ◽

Vol 56 (4S) ◽

pp. 04CG06 ◽

Author(s):

Chien-Hsiung Hung ◽

Shui-Jinn Wang ◽

Pang-Yi Liu ◽

Chien-Hung Wu ◽

Nai-Sheng Wu ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Room Temperature ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

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Fabrication and characterizations of ZnO thin film transistors prepared by using radio frequency magnetron sputtering

Solid-State Electronics ◽

10.1016/j.sse.2007.11.010 ◽

2008 ◽

Vol 52 (5) ◽

pp. 813-816 ◽

Author(s):

R. Navamathavan ◽

Chi Kyu Choi ◽

Eun-Jeong Yang ◽

Jae-Hong Lim ◽

Dae-Kue Hwang ◽

...

Keyword(s):

Thin Film ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Thin Film Transistors ◽

Radio Frequency Magnetron ◽

Zno Thin Film ◽

Radio Frequency Magnetron Sputtering

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Zinc Oxide Thin-Film Transistors on Flexible Plastic Substrates and Glass Substrates Fabricated at Room Temperature

10.7567/ssdm.2011.a-5-1 ◽

2011 ◽

Author(s):

T. Higaki ◽

Y. Kimura ◽

T. Maemoto ◽

S. Sasa ◽

M. Inoue

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Room Temperature ◽

Oxide Thin Film ◽

Zinc Oxide Thin Film ◽

Plastic Substrates ◽

Glass Substrates

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Thin film transistors based on TiO2 fabricated by using radio-frequency magnetron sputtering

Journal of Physics and Chemistry of Solids ◽

10.1016/j.jpcs.2010.08.024 ◽

2010 ◽

Vol 71 (12) ◽

pp. 1760-1762 ◽

Author(s):

W.S. Shih ◽

S.J. Young ◽

L.W. Ji ◽

W. Water ◽

T.H. Meen ◽

...

Keyword(s):

Thin Film ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Thin Film Transistors ◽

Radio Frequency Magnetron ◽

Radio Frequency Magnetron Sputtering

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