High-performance transparent Li-doped indium-tin-zinc-oxide thin film transistor fabricated by radio frequency magnetron sputtering method

Materials Letters ◽

10.1016/j.matlet.2018.07.098 ◽

2018 ◽

Vol 230 ◽

pp. 132-134 ◽

Author(s):

Ran Li ◽

Shiqian Dai ◽

Yaobin Ma ◽

Longjie Tian ◽

Qi Wang ◽

...

Keyword(s):

Thin Film ◽

Magnetron Sputtering ◽

Radio Frequency ◽

High Performance ◽

Thin Film Transistor ◽

Radio Frequency Magnetron ◽

Oxide Thin Film ◽

Radio Frequency Magnetron Sputtering ◽

Zinc Oxide Thin Film

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Fabrication and Characteristics of Zinc Oxide- and Gallium doped Zinc Oxide thin film transistor using Radio Frequency Magnetron sputtering at Room Temperature

Applied Science and Convergence Technology ◽

10.5757/jkvs.2007.16.5.359 ◽

2007 ◽

Vol 16 (5) ◽

pp. 359-365 ◽

Author(s):

Hoon-Ha Jeon ◽

Ved Prakash Verma ◽

Kyoung-Seok Noh ◽

Do-Hyun Kim ◽

Won-Bong Choi ◽

...

Keyword(s):

Thin Film ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Room Temperature ◽

Thin Film Transistor ◽

Radio Frequency Magnetron ◽

Oxide Thin Film ◽

Radio Frequency Magnetron Sputtering ◽

Zinc Oxide Thin Film

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Characteristics of Gallium-Doped Zinc Oxide Thin-Film Transistors Fabricated at Room Temperature Using Radio Frequency Magnetron Sputtering Method

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.87 ◽

2008 ◽

Vol 47 (1) ◽

pp. 87-90 ◽

Author(s):

Hoonha Jeon ◽

Ved Prakash Verma ◽

Sookhyun Hwang ◽

Sooyeon Lee ◽

Chiyoung Park ◽

...

Keyword(s):

Thin Film ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Thin Film Transistors ◽

Room Temperature ◽

Radio Frequency Magnetron ◽

Oxide Thin Film ◽

Radio Frequency Magnetron Sputtering ◽

Zinc Oxide Thin Film

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Relation between the plasma characteristics and physical properties of functional zinc oxide thin film prepared by radio frequency magnetron sputtering process

Thin Solid Films ◽

10.1016/j.tsf.2009.07.181 ◽

2010 ◽

Vol 518 (8) ◽

pp. 1953-1957 ◽

Author(s):

Che-Wei Hsu ◽

Tsung-Chieh Cheng ◽

Wen-Hsien Huang ◽

Jong-Shinn Wu ◽

Cheng-Chih Cheng ◽

...

Keyword(s):

Thin Film ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Physical Properties ◽

Radio Frequency Magnetron ◽

Oxide Thin Film ◽

Radio Frequency Magnetron Sputtering ◽

Zinc Oxide Thin Film ◽

Plasma Characteristics

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Improvement of bias stability of indium zinc oxide thin film transistors by the incorporation of hafnium fabricated by radio-frequency magnetron sputtering

Thin Solid Films ◽

10.1016/j.tsf.2011.04.044 ◽

2011 ◽

Vol 519 (20) ◽

pp. 6881-6883 ◽

Author(s):

Eugene Chong ◽

Yoon Soo Chun ◽

Seung Han Kim ◽

Sang Yeol Lee

Keyword(s):

Thin Film ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Radio Frequency Magnetron Sputtering ◽

Zinc Oxide Thin Film ◽

Indium Zinc Oxide ◽

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High Performance Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Interface Engineering

Advanced Functional Materials ◽

10.1002/adfm.202003285 ◽

2020 ◽

Vol 30 (34) ◽

pp. 2003285 ◽

Author(s):

Yepin Zhao ◽

Zhengxu Wang ◽

Guangwei Xu ◽

Le Cai ◽

Tae‐Hee Han ◽

...

Keyword(s):

Thin Film ◽

High Performance ◽

Thin Film Transistor ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Interface Engineering ◽

Zinc Oxide Thin Film ◽

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Characteristics and Time-Dependent Instability of Ga-Doped ZnO Thin Film Transistor Fabricated by Radio Frequency Magnetron Sputtering

Chinese Physics Letters ◽

10.1088/0256-307x/28/12/128502 ◽

2011 ◽

Vol 28 (12) ◽

pp. 128502 ◽

Author(s):

Hai-Qin Huang ◽

Jian Sun ◽

Feng-Juan Liu ◽

Jian-Wei Zhao ◽

Zuo-Fu Hu ◽

...

Keyword(s):

Thin Film ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Thin Film Transistor ◽

Radio Frequency Magnetron ◽

Time Dependent ◽

Zno Thin Film ◽

Radio Frequency Magnetron Sputtering ◽

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ZnO-Based Thin Film Transistor Fabricated Using Radio Frequency Magnetron Sputtering at Low Temperature

Materials and Manufacturing Processes ◽

10.1080/10426914.2014.892973 ◽

2014 ◽

Vol 30 (2) ◽

pp. 175-178 ◽

Author(s):

M. Amutha Surabi ◽

J. Chandradass ◽

Seong-Ju Park

Keyword(s):

Thin Film ◽

Low Temperature ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Thin Film Transistor ◽

Radio Frequency Magnetron ◽

Radio Frequency Magnetron Sputtering

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Deposition of NiO[sub x] thin films with radio frequency magnetron sputtering and their characteristics as a source/drain electrode for the pentacene thin film transistor

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2981075 ◽

2008 ◽

Vol 26 (5) ◽

pp. 1787 ◽

Author(s):

Dong-Jin Yun ◽

Shi-Woo Rhee

Keyword(s):

Thin Film ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Thin Film Transistor ◽

Radio Frequency Magnetron ◽

Radio Frequency Magnetron Sputtering ◽

Drain Electrode

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Electrochemical Performance of Iridium Oxide Thin Film for Supercapacitor Prepared by Radio Frequency Magnetron Sputtering Method

ECS Transactions ◽

10.1149/1.2985632 ◽

2019 ◽

Vol 16 (1) ◽

pp. 103-109 ◽

Author(s):

Dong-Qiang Liu ◽

Sung-Hun Yu ◽

Se-Wan Son ◽

Seung-Ki Joo

Keyword(s):

Thin Film ◽

Magnetron Sputtering ◽

Electrochemical Performance ◽

Radio Frequency ◽

Iridium Oxide ◽

Radio Frequency Magnetron ◽

Oxide Thin Film ◽

Radio Frequency Magnetron Sputtering

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Flexible and High-Performance Amorphous Indium Zinc Oxide Thin-Film Transistor Using Low-Temperature Atomic Layer Deposition

ACS Applied Materials & Interfaces ◽

10.1021/acsami.6b11774 ◽

2016 ◽

Vol 8 (49) ◽

pp. 33821-33828 ◽

Author(s):

Jiazhen Sheng ◽

Hwan-Jae Lee ◽

Saeroonter Oh ◽

Jin-Seong Park

Keyword(s):

Thin Film ◽

Low Temperature ◽

High Performance ◽

Thin Film Transistor ◽

Atomic Layer ◽

Oxide Thin Film ◽

Zinc Oxide Thin Film ◽

Indium Zinc Oxide ◽

Layer Deposition

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