Proceedings of the EMRS 2010 Summer Meeting Symposium E: Frontiers of Multifunctional Oxides

2011 ◽  
Vol 519 (17) ◽  
pp. 5721
Author(s):  
Wilfrid Prellier ◽  
Hans M. Christen ◽  
Catherine Dubourdieu ◽  
Jean-Marc Triscone
2009 ◽  
Vol 255 (10) ◽  
pp. 5396-5400 ◽  
Author(s):  
Maria M. Giangregorio ◽  
Maria Losurdo ◽  
Pio Capezzuto ◽  
Giovanni Bruno

2008 ◽  
Vol 54 ◽  
pp. 216-222 ◽  
Author(s):  
R.K. Pandey ◽  
H. Stern ◽  
W.J. Geerts ◽  
P. Padmini ◽  
P. Kale ◽  
...  

The phenomenal growths of information technology and related fields have warranted the development of new class of materials. Multifunctional oxides, magnetic-semiconductors, multiferroics and smart materials are just a few examples of such materials. They are needed for the development of novel technologies such as spintronics, magneto-electronics, radhard electronics, and advanced microelectronics. For these technologies, of particular interest are some solid solutions of ilmenite-hematite (IH) represented by (1-x) FeTiO3.xFe2O3 where x varies from 0 to 1; Mn-doped ilmenite (Mn+3-FeTiO3) and Mn-doped pseudobrookite, Mn+3-Fe2TiO5 (PsB). These multifunctional oxides are ferromagnetic with the magnetic Curie points well above the room temperature as well as wide bandgap semiconductors with band gap Eg > 2.5 eV. This paper outlines: (a) processing of device quality samples for structural, electrical and magnetic characterization, (b) fabrication and evaluation of an integrated structure for controlled magnetic switching, and (c) the response of the two terminal non-linear current-voltage (I-V) characteristics when biased by a dc voltage. Subsequently, we will identify a few microelectronic applications based on this class of oxides.


MRS Advances ◽  
2016 ◽  
Vol 1 (4) ◽  
pp. 255-263
Author(s):  
J. H. Ngai ◽  
K. Ahmadi-Majlan ◽  
J. Moghadam ◽  
M. Chrysler ◽  
D. P. Kumah ◽  
...  

ABSTRACTComplex oxides and semiconductors exhibit distinct yet complementary properties owing to their respective ionic and covalent natures. By electrically coupling oxides to semiconductors within epitaxial heterostructures, enhanced or novel functionalities beyond those of the constituent materials can potentially be realized. Key to electrically coupling oxides to semiconductors is controlling the physical and electronic structure of semiconductor – crystalline oxide heterostructures. Here we discuss how composition of the oxide can be manipulated to control physical and electronic structure in Ba1-xSrxTiO3/ Ge and SrZrxTi1-xO3/Ge heterostructures. In the case of the former we discuss how strain can be engineered through composition to enable the re-orientable ferroelectric polarization to be coupled to carriers in the semiconductor. In the case of the latter we discuss how composition can be exploited to control the band offset at the semiconductor - oxide interface. The ability to control the band offset, i.e. band-gap engineering, provides a pathway to electrically couple crystalline oxides to semiconductors to realize a host of functionalities.


2015 ◽  
Vol 106 (6) ◽  
pp. 063304 ◽  
Author(s):  
Piran R. Kidambi ◽  
Christ Weijtens ◽  
John Robertson ◽  
Stephan Hofmann ◽  
Jens Meyer

2019 ◽  
Vol 21 (44) ◽  
pp. 24643-24649
Author(s):  
A. V. Kimmel

First principles simulations of Pt/PbZrTiO3 interfaces demonstrate how interfacial interactions defines the effectiveness of the screening, and ease of polarisation switching in nanocapacitors with multifunctional oxide.


2013 ◽  
Vol 24 (17) ◽  
pp. 2510-2517 ◽  
Author(s):  
David Ávila-Brande ◽  
Graham King ◽  
Esteban Urones-Garrote ◽  
Subakti ◽  
Anna Llobet ◽  
...  

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