On the electrical properties of Si-doped InGaP layers grown by low pressure‐metalorganic vapor phase epitaxy
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2011 ◽
Vol 50
(9)
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pp. 095502
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1999 ◽
Vol 38
(Part 1, No. 2B)
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pp. 1048-1051
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2013 ◽
Vol 52
(8S)
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pp. 08JL07
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2011 ◽
Vol 50
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pp. 095502
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1994 ◽
Vol 138
(1-4)
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pp. 114-120
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1994 ◽
Vol 33
(Part 1, No. 12A)
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pp. 6481-6485
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