Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric

Atomic Layer ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode ◽

Enhancement mode GaN-based multiple-submicron channel array gate-recessed fin metal-oxide-semiconductor high-electron mobility transistors

AIP Advances ◽

10.1063/1.5022029 ◽

2018 ◽

Vol 8 (4) ◽

pp. 045014 ◽

Cited By ~ 2

Author(s):

Ching-Ting Lee ◽

Chun-Chi Wang

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode ◽

A Simple Gate-Dielectric Fabrication Process for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

IEEE Electron Device Letters ◽

10.1109/led.2012.2197370 ◽

2012 ◽

Vol 33 (7) ◽

pp. 997-999 ◽

Cited By ~ 27

Author(s):

Han-Yin Liu ◽

Bo-Yi Chou ◽

Wei-Chou Hsu ◽

Ching-Sung Lee ◽

Chiu-Sheng Ho

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

Fabrication Process ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Physical and electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with rare earth Er2O3 as a gate dielectric

Thin Solid Films ◽

10.1016/j.tsf.2013.01.028 ◽

2013 ◽

Vol 544 ◽

pp. 526-529 ◽

Cited By ~ 7

Author(s):

Ray-Ming Lin ◽

Fu-Chuan Chu ◽

Atanu Das ◽

Sheng-Yu Liao ◽

Shu-Tsun Chou ◽

...

Keyword(s):

Rare Earth ◽

Electron Mobility ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

High Electron ◽

Electrical Characteristics ◽

High Electron Mobility ◽

Material and device characterizations of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors with reactive-sputtered HfO2 gate dielectric

2006 64th Device Research Conference ◽

10.1109/drc.2006.305144 ◽

2006 ◽

Author(s):

Chang Liu ◽

Eng Chor ◽

Leng Tan

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN–GaN metal oxide semiconductor high electron mobility transistors on Si substrates

Thin Solid Films ◽

10.1016/j.tsf.2012.05.073 ◽

2012 ◽

Vol 520 (19) ◽

pp. 6230-6232 ◽

Cited By ~ 15

Author(s):

A. Alexewicz ◽

C. Ostermaier ◽

C. Henkel ◽

O. Bethge ◽

J.-F. Carlin ◽

...

Keyword(s):

Threshold Voltage ◽

Electron Mobility ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Si Substrates ◽

Enhancement Mode ◽

Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.04df03 ◽

2011 ◽

Vol 50 (4) ◽

pp. 04DF03 ◽

Cited By ~ 10

Author(s):

Joseph J. Freedsman ◽

Toshiharu Kubo ◽

S. Lawrence Selvaraj ◽

Takashi Egawa

Keyword(s):

Metal Oxide ◽

Breakdown Voltage ◽

Electron Mobility ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors Using Ga2O3 Gate Dielectric Layer Grown by Vapor Cooling Condensation System

Journal of Electronic Materials ◽

10.1007/s11664-021-08879-8 ◽

2021 ◽

Author(s):

Hsin-Ying Lee ◽

Ting-Wei Chang ◽

Ching-Ting Lee

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Dielectric Layer ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Integrated Monolithic Inverter Using Gate-Recessed GaN-Based Enhancement-Mode and Depletion-Mode Metal-Oxide-Semiconductor High-Electron Mobility Transistors

ECS Journal of Solid State Science and Technology ◽

10.1149/2.0121710jss ◽

2017 ◽

Vol 6 (10) ◽

pp. Q123-Q126 ◽

Cited By ~ 2

Author(s):

Ching-Ting Lee ◽

Hsin-Ying Lee ◽

Jhe-Hao Chang

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode ◽

Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors

Journal of Applied Physics ◽

10.1063/1.5049220 ◽

2019 ◽

Vol 126 (3) ◽

pp. 034102 ◽

Cited By ~ 2

Author(s):

T. Partida-Manzanera ◽

Z. H. Zaidi ◽

J. W. Roberts ◽

S. B. Dolmanan ◽

K. B. Lee ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectrics ◽

Atomic Layer ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.4811754 ◽

2013 ◽

Vol 102 (24) ◽

pp. 243509 ◽

Cited By ~ 35

Author(s):

M. Ťapajna ◽

M. Jurkovič ◽

L. Válik ◽

Š. Haščík ◽

D. Gregušová ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽