Comprehensive characterization of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with TiO2 gate dielectric

physica status solidi (c) ◽

10.1002/pssc.201600227 ◽

2016 ◽

Author(s):

Yu-Shyan Lin ◽

Chi-Che Lu ◽

Wei-Chou Hsu

Keyword(s):

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Comprehensive Characterization

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A Simple Gate-Dielectric Fabrication Process for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

IEEE Electron Device Letters ◽

10.1109/led.2012.2197370 ◽

2012 ◽

Vol 33 (7) ◽

pp. 997-999 ◽

Author(s):

Han-Yin Liu ◽

Bo-Yi Chou ◽

Wei-Chou Hsu ◽

Ching-Sung Lee ◽

Chiu-Sheng Ho

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Fabrication Process ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Physical and electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with rare earth Er2O3 as a gate dielectric

Thin Solid Films ◽

10.1016/j.tsf.2013.01.028 ◽

2013 ◽

Vol 544 ◽

pp. 526-529 ◽

Author(s):

Ray-Ming Lin ◽

Fu-Chuan Chu ◽

Atanu Das ◽

Sheng-Yu Liao ◽

Shu-Tsun Chou ◽

...

Keyword(s):

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

Electrical Characteristics ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Material and device characterizations of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors with reactive-sputtered HfO2 gate dielectric

2006 64th Device Research Conference ◽

10.1109/drc.2006.305144 ◽

2006 ◽

Author(s):

Chang Liu ◽

Eng Chor ◽

Leng Tan

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.04df03 ◽

2011 ◽

Vol 50 (4) ◽

pp. 04DF03 ◽

Author(s):

Joseph J. Freedsman ◽

Toshiharu Kubo ◽

S. Lawrence Selvaraj ◽

Takashi Egawa

Keyword(s):

Metal Oxide ◽

Breakdown Voltage ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors Using Ga2O3 Gate Dielectric Layer Grown by Vapor Cooling Condensation System

Journal of Electronic Materials ◽

10.1007/s11664-021-08879-8 ◽

2021 ◽

Author(s):

Hsin-Ying Lee ◽

Ting-Wei Chang ◽

Ching-Ting Lee

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Dielectric Layer ◽

Gate Dielectric ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.4811754 ◽

2013 ◽

Vol 102 (24) ◽

pp. 243509 ◽

Author(s):

M. Ťapajna ◽

M. Jurkovič ◽

L. Válik ◽

Š. Haščík ◽

D. Gregušová ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric

Applied Physics Letters ◽

10.1063/1.2814052 ◽

2007 ◽

Vol 91 (21) ◽

pp. 212101 ◽

Author(s):

H. C. Lin ◽

T. Yang ◽

H. Sharifi ◽

S. K. Kim ◽

Y. Xuan ◽

...

Keyword(s):

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode ◽

Electron Mobility Transistors

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Bimodal gate-dielectric deposition for improved performance of AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/45/4/045105 ◽

2012 ◽

Vol 45 (4) ◽

pp. 045105 ◽

Author(s):

Liang Pang ◽

Kyekyoon (Kevin) Kim

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Improved Performance

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Thermal and Electrical Stability Assessment of AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistors (MOS-HEMTs) With HfO2 Gate Dielectric

IEEE Transactions on Electron Devices ◽

10.1109/ted.2018.2842205 ◽

2018 ◽

Vol 65 (8) ◽

pp. 3142-3148 ◽

Author(s):

Z. Gao ◽

M. F. Romero ◽

F. Calle

Keyword(s):

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

Stability Assessment ◽

Electrical Stability ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Photoelectrochemical oxidation-treated AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with oxidized layer/Ta2O5/Al2O3 gate dielectric stack

Applied Physics Letters ◽

10.1063/1.4819159 ◽

2013 ◽

Vol 103 (8) ◽

pp. 082104 ◽

Author(s):

Ching-Ting Lee ◽

Ya-Lan Chiou

Keyword(s):

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Photoelectrochemical Oxidation ◽

Al2o3 Gate Dielectric

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