Structural investigation of ZnO:Al films deposited on the Si substrates by radio frequency magnetron sputtering

2013 ◽  
Vol 545 ◽  
pp. 183-187 ◽  
Author(s):  
Y.Y. Chen ◽  
J.R. Yang ◽  
S.L. Cheng ◽  
M. Shiojiri
2007 ◽  
Vol 336-338 ◽  
pp. 374-376
Author(s):  
Jia Xuan Liao ◽  
C.R. Yang ◽  
J.H. Zhang ◽  
H. Chen ◽  
C.L. Fu ◽  
...  

Ba0.6Sr0.4TiO3 (BST) thin films deposited on Pt/Ti/SiO2/Si substrates by radio frequency magnetron sputtering and crystallized by rapid thermal annealing (RTA) exhibit much thinner BST/Pt interfacial transition layer and higher dielectric properties than the films crystallized by conventional thermal annealing (CTA). HRTEM observations show that the transition layer is 2-3nm thick for RTA and 4-5nm thick for CTA. XPS investigations display that the transition layer is composed of perovskited BST phase and non-perovskited BST phase, and RTA corresponds to much less non-perovskited BST phase than CTA. The reason for non-perovskited BST phase and the dielectric properties of BST films are also presented.


1995 ◽  
Vol 66 (20) ◽  
pp. 2643-2645 ◽  
Author(s):  
Ching‐Chyuan Yang ◽  
Ming‐Sen Chen ◽  
Tian‐Jue Hong ◽  
Chii‐Ming Wu ◽  
Jenn‐Ming Wu ◽  
...  

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