Low temperature growth of highly conductive boron-doped germanium thin films by electron cyclotron resonance chemical vapor deposition

Thin Solid Films ◽

10.1016/j.tsf.2013.11.099 ◽

2014 ◽

Vol 551 ◽

pp. 53-56 ◽

Author(s):

Teng-Hsiang Chang ◽

Chiao Chang ◽

Yen-Ho Chu ◽

Chien-Chieh Lee ◽

Jenq-Yang Chang ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Temperature Growth ◽

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Low temperature growth of fluorinated oxides using Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition

10.31274/rtd-20210128-16 ◽

2001 ◽

Author(s):

Roger Graham Keen

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Temperature Growth ◽

Low Temperature Growth ◽

Resonance Plasma

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Low‐temperature homoepitaxial growth of Si by electron cyclotron resonance plasma enhanced chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.114962 ◽

1995 ◽

Vol 67 (7) ◽

pp. 971-973 ◽

Author(s):

J. L. Rogers ◽

P. S. Andry ◽

W. J. Varhue ◽

P. McGaughnea ◽

E. Adams ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Homoepitaxial Growth ◽

Resonance Plasma

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Electron Cyclotron Resonance Plasma Sources and Their Use in Plasma-Assisted Chemical Vapor Deposition of Thin Films

Physics of Thin Films - Plasma Sources for Thin Film Deposition and Etching ◽

10.1016/b978-0-08-092513-4.50007-6 ◽

1994 ◽

pp. 121-233 ◽

Author(s):

OLEG A. POPOV

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Plasma Sources ◽

Resonance Plasma

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Low temperature epitaxial growth of Ge using electron‐cyclotron‐resonance plasma‐assisted chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.351189 ◽

1992 ◽

Vol 71 (4) ◽

pp. 1949-1954 ◽

Author(s):

W. J. Varhue ◽

J. M. Carulli ◽

G. G. Peterson ◽

J. A. Miller

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Epitaxial Growth ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Preparation of ZnF2 and ZnF2–BaF2 thin films by electron cyclotron resonance plasma-enhanced chemical vapor deposition

Thin Solid Films ◽

10.1016/s0040-6090(99)00716-6 ◽

2000 ◽

Vol 358 (1-2) ◽

pp. 99-103 ◽

Author(s):

Masanori Shojiya ◽

Yoji Kawamoto ◽

Akio Konishi ◽

Hajimu Wakabayashi

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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I‐Vcharacteristics of electron‐cyclotron‐resonance plasma‐enhanced chemical‐vapor‐deposition silicon nitride thin films

Journal of Applied Physics ◽

10.1063/1.356455 ◽

1994 ◽

Vol 75 (2) ◽

pp. 979-984 ◽

Author(s):

Yoo‐Chan Jeon ◽

Ho‐Young Lee ◽

Seung‐Ki Joo

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Biased Electron Cyclotron Resonance Chemical-Vapor Deposition of Silicon Dioxide Inter-Metal Dielectric Thin Films

Materials Science Forum ◽

10.4028/www.scientific.net/msf.140-142.255 ◽

1993 ◽

Vol 140-142 ◽

pp. 255-268 ◽

Author(s):

P. Shufflebotham ◽

M. Weise ◽

D. Pirkle ◽

D. Denison

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Dioxide ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Dielectric Thin Films

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Studies on low temperature silicon grain growth on SiO2 by electron cyclotron resonance chemical vapor deposition

Applied Surface Science ◽

10.1016/s0169-4332(96)00174-2 ◽

1996 ◽

Vol 104-105 ◽

pp. 373-378

Author(s):

K.C. Wang ◽

H.L. Hwang ◽

J.J. Loferski ◽

T.R. Yew

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Grain Growth ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron

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Low Temperature Chemical Vapor Deposition Method Utilizing an Electron Cyclotron Resonance Plasma

Japanese Journal of Applied Physics ◽

10.1143/jjap.22.l210 ◽

1983 ◽

Vol 22 (Part 2, No. 4) ◽

pp. L210-L212 ◽

Author(s):

Seitaro Matsuo ◽

Mikiho Kiuchi

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Chemical Vapor Deposition Method ◽

Deposition Method ◽

Resonance Plasma

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Nanocrystalline Silicon Thin Films Fabricated at 80°C by Using Electron Cyclotron Resonance Chemical Vapor Deposition

Plasma Science and Technology ◽

10.1088/1009-0630/12/5/19 ◽

2010 ◽

Vol 12 (5) ◽

pp. 608-613 ◽

Author(s):

I. Y. Y Bu ◽

A. J Flewitt ◽

W. I Miline

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Nanocrystalline Silicon ◽

Electron Cyclotron ◽

Silicon Thin Films

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