Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si substrate: Effects of rapid thermal annealing

2016 ◽  
Vol 613 ◽  
pp. 55-58 ◽  
Author(s):  
R. Woscholski ◽  
M.K. Shakfa ◽  
S. Gies ◽  
M. Wiemer ◽  
A. Rahimi-Iman ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Si Substrate ◽  
Substrate Effects ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Optical Transitions and Recombination Lifetimes in GaN and InGaN Epilayers, and InGaN/GaN and GaN/AlGaN Multiple Quantum Wells

1996 ◽  
Vol 449 ◽  
Author(s):  
M. Smith ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
A. Khan ◽  
Q. Chen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Chemical Vapor ◽  
Multiple Quantum Wells ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
Optical Transitions ◽  
Time Resolved ◽  
Metal Organic ◽  
Recombination Lifetimes ◽  
Time Resolved Photoluminescence

ABSTRACTTime-resolved photoluminescence (PL) has been employed to study the optical transitions and their dynamical processes in GaN and InxGa1-xN epilayers, and GaN/GaN and GaN/ALxGa1-xN multiple quantum wells (MQW). We compare the results from both metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) grown samples. In addition, results are also compared with GaAs/ALxGa1-xAs MQW. It was found for all samples that the low temperature emission lines were dominated by radiative recombination transitions of either localized or free excitons, which demonstrates the high quality and purity of these III-nitride materials.

scholarly journals Time-resolved photoluminescence of quaternary AlInGaN-based multiple quantum wells

2002 ◽  
Vol 80 (21) ◽  
pp. 3943-3945 ◽  
Author(s):  
Mee-Yi Ryu ◽  
C. Q. Chen ◽  
E. Kuokstis ◽  
J. W. Yang ◽  
G. Simin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Time Resolved Photoluminescence
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