Consistency on Two Kinds of Localized Centers Examined from Temperature-Dependent and Time-Resolved Photoluminescence in InGaN/GaN Multiple Quantum Wells

ACS Photonics ◽  
2017 ◽  
Vol 4 (8) ◽  
pp. 2078-2084 ◽  
Author(s):  
Zilan Wang ◽  
Lai Wang ◽  
Yuchen Xing ◽  
Di Yang ◽  
Jiadong Yu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Temperature Dependent ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence measurements of InGaN light-emitting diodes, films, and multiple quantum wells

1999 ◽  
Author(s):  
Milan Pophristic ◽  
Frederick H. Long ◽  
Chuong A. Tran ◽  
Ian T. Ferguson ◽  
Robert F. Karlicek, Jr.
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Light Emitting ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence measurements of quantum dots in InGaN multiple quantum wells and light-emitting diodes

1999 ◽  
Vol 86 (2) ◽  
pp. 1114-1118 ◽  
Author(s):  
M. Pophristic ◽  
F. H. Long ◽  
C. Tran ◽  
I. T. Ferguson ◽  
R. F. Karlicek
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Light Emitting ◽  
Time Resolved Photoluminescence

Optical Transitions and Recombination Lifetimes in GaN and InGaN Epilayers, and InGaN/GaN and GaN/AlGaN Multiple Quantum Wells

1996 ◽  
Vol 449 ◽  
Author(s):  
M. Smith ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
A. Khan ◽  
Q. Chen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Chemical Vapor ◽  
Multiple Quantum Wells ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
Optical Transitions ◽  
Time Resolved ◽  
Metal Organic ◽  
Recombination Lifetimes ◽  
Time Resolved Photoluminescence

ABSTRACTTime-resolved photoluminescence (PL) has been employed to study the optical transitions and their dynamical processes in GaN and InxGa1-xN epilayers, and GaN/GaN and GaN/ALxGa1-xN multiple quantum wells (MQW). We compare the results from both metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) grown samples. In addition, results are also compared with GaAs/ALxGa1-xAs MQW. It was found for all samples that the low temperature emission lines were dominated by radiative recombination transitions of either localized or free excitons, which demonstrates the high quality and purity of these III-nitride materials.

scholarly journals Time-resolved photoluminescence of quaternary AlInGaN-based multiple quantum wells

2002 ◽  
Vol 80 (21) ◽  
pp. 3943-3945 ◽  
Author(s):  
Mee-Yi Ryu ◽  
C. Q. Chen ◽  
E. Kuokstis ◽  
J. W. Yang ◽  
G. Simin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Time resolved photoluminescence study of Si modulation doped GaN/Al0.07Ga0.93N multiple quantum wells

2004 ◽  
Vol 241 (5) ◽  
pp. 1124-1133 ◽  
Author(s):  
H. Haratizadeh ◽  
B. Monemar ◽  
P. P. Paskov ◽  
P. O. Holtz ◽  
G. Pozina ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Photoluminescence Study ◽  
Time Resolved Photoluminescence

Piezoelectric Effects in GaN/AlGaN Multiple Quantum Wells Probed by Picosecond Time-Resolved Photoluminescence

1998 ◽  
Vol 537 ◽  
Author(s):  
H. S. Kim ◽  
Y. Lin ◽  
H. X. Jiang ◽  
W. W. Chow ◽  
A. Botchkarev ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Peak Position ◽  
Multiple Quantum Wells ◽  
Collective Effects ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Delay Times ◽  
Piezoelectric Effects ◽  
Piezoelectric Field ◽  
Time Resolved Photoluminescence

AbstractPiezoelectric effects in GaN/AlGaN multiple quantum wells (MQWs) have been directly probed by picosecond time-resolved photoluminescence (PL) spectroscopy. The time-resolved PL spectra of the 40 Å well MQWs reveal that the PL transition peak position is in fact blueshifted at early delay times due to the collective effects of quantum confinement of carriers, piezoelectric field, and Coulomb screening. However, the spectral peak position shifts toward lower energies as the delay time increases and becomes redshifted at longer delay times. By comparing experimental and calculation results, we have obtained a low limit of the piezoelectric field strength to be about 560 kV/cm in the 40 Å well GaN/Al0.15Ga0.85N MQWs.

Optical Properties of Zn0.46Cd0.54Se/Zn0.24Cd0.25Mg0.51Se Multiple Quantum Wells for Infrared Photodetector Applications

2006 ◽  
Vol 952 ◽  
Author(s):  
Xuecong Zhou ◽  
Shengkun Zhang ◽  
Hong Lu ◽  
Aidong Shen ◽  
Wubao Wang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Cascade Lasers ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Infrared Photodetector ◽  
Temperature Dependent ◽  
Time Resolved ◽  
Mid Infrared ◽  
Luminescence Efficiency ◽  
Decay Times

ABSTRACTRecently, lattice-matched Zn0.46Cd0.54Se/ZnCdMgSe multiple-quantum-wells (MQWs) have been recognized as very promising materials to fabricate intersubband (ISB) devices such as quantum cascade lasers and mid-infrared photoconductors. These structures have important applications in biological and chemical detections. The ISB transition covers a wide mid-infrared wavelength range from 1.3 μm to a few tens of μm.In this work, two heavily doped n-Zn0.46Cd0.54Se/Zn0.24Cd0.25Mg0.51Se MQW structures have been grown on InP (001) substrate by molecular beam epitaxy. Temperature dependent steady-state photoluminescence (SSPL), temperature dependent time- resolved photoluminescence (TRPL), and Fourier transform infrared spectroscopy (FTIR) were performed to characterize their interband and ISB properties. These two MQW samples have similar structures except different well widths and different number of periods. The integrated SSPL intensities and the PL decay times of the MQWs were measured as functions of temperature in the range from 77 K to 290 K. The luminescence efficiency of the sample with 28 Å well width is larger than that of the sample with 42 Å well width although both samples exhibit similar temperature dependence of PL intensity. Time-resolved PL measurements show that the PL decay times of both samples decrease with increasing temperature. From 77 K to 290 K, the decay time of the sample with 28 Å well width is in the range of 440 ps ∼ 120 ps and is much longer than that of the sample with 42 Å well width, which is in the range of 65 ps ∼ 25 ps. Strong non-radiative recombinations dominate the luminescence behavior of the wider MQWs. Intersubband absorption spectra of the samples were measured by FTIR and show peak absorption at wavelengths of 3.99 μm and 5.35 μm for the MQWs with well widths of 28 Å and 42 Å, respectively, falling within the 3-5 Åm range, which is of great interest for the infrared photodetector applications.

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