Dual-mechanism modelling of instability in nanocrystalline silicon thin film transistors under prolonged gate-bias stress

2018 ◽  
Vol 651 ◽  
pp. 145-150 ◽  
Author(s):  
Tamila Anutgan ◽  
Mustafa Anutgan ◽  
Ismail Atilgan
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Nanocrystalline Silicon ◽  
Gate Bias ◽  
Silicon Thin Film ◽  
Bias Stress ◽  
Dual Mechanism ◽  
Gate Bias Stress

Degradation behavior and degradation mechanism of bridged-grain polycrystalline silicon thin film transistors under AC gate bias stress

2017 ◽  
Vol 32 (2) ◽  
pp. 91-96
Author(s):  
张猛 ZHANG Meng ◽  
夏之荷 XIA Zhi-he ◽  
周玮 ZHOU Wei ◽  
陈荣盛 CHEN Rong-sheng ◽  
王文 WONG Man ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Degradation Mechanism ◽  
Gate Bias ◽  
Degradation Behavior ◽  
Silicon Thin Film ◽  
Bias Stress ◽  
Gate Bias Stress

Anomalous on-current and subthreshold swing improvement in low-temperature polycrystalline-silicon thin-film transistors under Gate bias stress

2011 ◽  
Vol 98 (12) ◽  
pp. 122101 ◽  
Author(s):  
Chia-Sheng Lin ◽  
Ying-Chung Chen ◽  
Ting-Chang Chang ◽  
Fu-Yen Jian ◽  
Hung-Wei Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Subthreshold Swing ◽  
Gate Bias ◽  
Silicon Thin Film ◽  
Bias Stress ◽  
Gate Bias Stress

DC and AC Gate-Bias Stability of Nanocrystalline Silicon Thin-Film Transistors Made on Colorless Polyimide Foil Substrates

2011 ◽  
Vol 1321 ◽  
Author(s):  
I-Chung Chiu ◽  
I-Chun Cheng ◽  
Jian Z. Chen ◽  
Jung-Jie Huang ◽  
Yung-Pei Chen
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Nanocrystalline Silicon ◽  
Gate Bias ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Bias Stress ◽  
Mechanical Tensile ◽  
Gate Bias Stress

ABSTRACTStaggered bottom-gate hydrogenated nanocrystalline silicon (nc-Si:H) thin-film transistors (TFTs) were demonstrated on flexible colorless polyimide substrates. The dc and ac bias-stress stability of these TFTs were investigated with and without mechanical tensile stress applied in parallel to the current flow direction. The findings indicate that the threshold voltage shift caused by an ac gate-bias stress was smaller compared to that caused by a dc gate-bias stress. Frequency dependence of threshold voltage shift was pronounced in the negative gate-bias stress experiments. Compared to TFTs under pure electrical gate-bias stressing, the stability of the nc-Si:H TFTs degrades further when the mechanical tensile strain is applied together with an electrical gate-bias stress.

Abnormal hysteresis formation in hump region after positive gate bias stress in low-temperature poly-silicon thin film transistors

2020 ◽  
Vol 53 (40) ◽  
pp. 405104
Author(s):  
Hong-Yi Tu ◽  
Ting-Chang Chang ◽  
Yu-Ching Tsao ◽  
Mao-Chou Tai ◽  
Yu-Lin Tsai ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Gate Bias ◽  
Silicon Thin Film ◽  
Bias Stress ◽  
Poly Silicon ◽  
Gate Bias Stress
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