Due to their extraordinary electrical, thermal and mechanical properties, carbon nanotubes (CNTs) have been foreseen as potential materials for electronics devices in the future. To integrate CNTs in electronic applications, CNTs would need to be deposited on different types of Si substrate. In this study, CNTs were grown on Ni catalyst layer with four types of substrates, namely Si, n++ Si, p++ Si and SiO2, using Plasma Enhanced Chemical Vapor Deposition (PECVD). The morphology and microstructure of the CNT films were analyzed by scanning electron microscopy (SEM) and Raman spectroscope. It was found that the type of Si substrate has significant effects on CNT growing characteristics. The possible mechanisms for the observed results are proposed. These findings add significant reference value to select deposition conditions suitable for deposition of CNTs on different types of Si substrate.