Effects of Ni catalyst–substrate interaction on carbon nanotubes growth by CVD

2007 ◽  
Vol 37 (1-2) ◽  
pp. 21-25 ◽  
Author(s):  
G.P. Veronese ◽  
R. Rizzoli ◽  
R. Angelucci ◽  
M. Cuffiani ◽  
L. Malferrari ◽  
...  
2003 ◽  
Vol 772 ◽  
Author(s):  
Masakazu Muroyama ◽  
Kazuto Kimura ◽  
Takao Yagi ◽  
Ichiro Saito

AbstractA carbon nanotube triode using Helicon Plasma-enhanced CVD with electroplated NiCo catalyst has been successfully fabricated. Isolated NiCo based metal catalyst was deposited at the bottom of the cathode wells by electroplating methods to control the density of carbon nanotubes and also reduce the activation energy of its growth. Helicon Plasma-enhanced CVD (HPECVD) has been used to deposit nanotubes at 400°C. Vertically aligned carbon nanotubes were then grown selectively on the electroplated Ni catalyst. Field emission measurements were performed with a triode structure. At a cathode to anode gap of 1.1mm, the turn on voltage for the gate was 170V.


2001 ◽  
Vol 7 (S2) ◽  
pp. 428-429
Author(s):  
Paula P. Provencio ◽  
Michael P. Siegal ◽  
Donald L. Overmyer

Carbon nanotubes have previously been grown on Ni coated glass, aligned vertical to the substrate over a multi-centimeter square area1. Under vacuum, the aligned nanotubes were grown below 666° C (strain point of the best display glass) by plasma-enhanced hot filament, chemical vapor deposition. It was found, the size and alignment of the nanotubes could be varied by changing the dwell time and the thickness of the catalytic Ni layer by plasma etching. in more recent, ongoing studies, the size of carbon nanotubes is varied by changing the growth temperature and dwell time under acetylene/nitrogen atmosphere using chemical vapor deposition onto W and Ni coated Si.Multiwall carbon nanotube films are grown using a thermally-activated chemical vapor deposition process. Thin Ni catalyst layers are sputtered onto W-coated Si(100) and reduced in a 600°C CO anneal. Nanotubes then grow at temperatures ranging from 630 - 790°C in an acetylene/nitrogen mixture.


Author(s):  
K. P. Yung ◽  
R. Y. J. Tay ◽  
J. Wei ◽  
B. K. Tay

Due to their extraordinary electrical, thermal and mechanical properties, carbon nanotubes (CNTs) have been foreseen as potential materials for electronics devices in the future. To integrate CNTs in electronic applications, CNTs would need to be deposited on different types of Si substrate. In this study, CNTs were grown on Ni catalyst layer with four types of substrates, namely Si, n++ Si, p++ Si and SiO2, using Plasma Enhanced Chemical Vapor Deposition (PECVD). The morphology and microstructure of the CNT films were analyzed by scanning electron microscopy (SEM) and Raman spectroscope. It was found that the type of Si substrate has significant effects on CNT growing characteristics. The possible mechanisms for the observed results are proposed. These findings add significant reference value to select deposition conditions suitable for deposition of CNTs on different types of Si substrate.


2005 ◽  
Vol 901 ◽  
Author(s):  
Guan Yow Chen ◽  
P.C.H. Poa ◽  
S.J. Henley ◽  
V. Stolojan ◽  
S.R.P. Silva

AbstractIn this paper, we report clear evidence for the growth of carbon nanotubes and nanostructures at low substrate temperatures, using direct-current plasma-enhanced chemical vapour deposition. The catalyst particles are mounted on a titanium layer which acts as a thermal barrier, and allows for a larger temperature gradient between the Ni catalyst surface and the substrate. A simple thermodynamic simulation shows that the temperature differential between the substrate growth surface and the growth electrode is determined by the thickness of the titanium layer. This facilitates the growth of nanotubes, as opposed to nanofibres with herring-bone or amorphous structures. The growth properties are discussed as a function of the bias voltage and hydrocarbon concentration. The heating during growth provided solely by the plasma is below 400°C and is dependent on the process conditions and the electrode configuration in the growth chamber. These conditions need to be taken into account when comparing processes across different growth methods and instruments. The novel approach based on the use of a thermal barrier ensures the synthesis of carbon nanotubes at room temperature substrate conditions, which can be attained with a suitable cooling scheme.


Vacuum ◽  
2006 ◽  
Vol 81 (1) ◽  
pp. 22-24 ◽  
Author(s):  
T. Daniš ◽  
M. Kadlečíková ◽  
A. Vojačková ◽  
J. Breza ◽  
M. Michalka ◽  
...  

2002 ◽  
Vol 01 (03n04) ◽  
pp. 223-234 ◽  
Author(s):  
X. SUN ◽  
R. LI ◽  
G. LEBRUN ◽  
B. STANSFIELD ◽  
J. P. DODELET ◽  
...  

A newly designed gas phase thermal decomposition reactor, ohmically heating the catalytic sites, has been used to synthesize multiwall carbon nanotubes (MWCNTs) on carbon paper and stainless steel screen. Co-Ni catalyst particles were dispersed by a silane intermediate layer adsorbed onto the carbon fibers or the stainless steel threads of the supports. MWCNTs were obtained on both substrates by a tip grown mechanism. They are about 20 μm in length and 15–50 nm in diameter. A methanol pretreatment of the carbon fibers significantly increased the density of the tubes on the carbon paper, but the same treatment had a negative effect on stainless steel. The MWCNTs, which adhere firmly to the carbon paper and the stainless steel screen, may find applications as electrodes in fuel cells, sensors and in photonics.


2015 ◽  
Vol 1107 ◽  
pp. 314-319
Author(s):  
Mai Woon Lee ◽  
Muhammad Aniq Shazni Mohammad Haniff ◽  
Au Shih Teh ◽  
Daniel C.S. Bien ◽  
Soo Kien Chen ◽  
...  

In this paper, the effect of nickel (Ni) catalyst on the growth of carbon nanotubes (CNTs) was studied where the CNTs were vertically grown by plasma enhanced chemical vapor deposition (PECVD) method. The growth conditions were fixed at a temperature of 700°C with a pressure of 1000mTorr for 40 minutes with various thicknesses of sputtered Ni catalyst. Experimental results show that high density of CNTs was observed especially towards thicker catalyst layers where larger and taller nanotubes were formed. The growth rate increases by ~0.7 times with increasing catalyst thickness from 4nm to 10nm. The nucleation of the catalyst with various thicknesses was also studied as the absorption of the carbon feedstock is dependent on the initial size of the catalyst island. From the Raman results, we found that only slight variation in the intensity ratio of G-band over D-band as increasing catalyst thicknesses. The minor difference in G/D ratio indicates that the catalyst thickness does not significantly influence the quality of CNTs grown.


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