WO3 and WO3-x thin films prepared by DC hollow cathode discharge

Vacuum ◽  
2021 ◽  
pp. 110679
Author(s):  
J. Olejníček ◽  
A. Hrubantová ◽  
L. Volfová ◽  
M. Dvořáková ◽  
M. Kohout ◽  
...  
1991 ◽  
Vol 180 (1-4) ◽  
pp. 85-89 ◽  
Author(s):  
F. Ludwig ◽  
V. Hinkel ◽  
T. Schurig ◽  
J.-P. Müller ◽  
U. Stösslein ◽  
...  

2019 ◽  
Vol 366 ◽  
pp. 303-310 ◽  
Author(s):  
Jiří Olejníček ◽  
Jiří Šmíd ◽  
Roman Perekrestov ◽  
Petra Kšírová ◽  
Jiří Rathouský ◽  
...  

2016 ◽  
Vol 12 (3) ◽  
pp. 4400-4404
Author(s):  
Khaled Hussein Metwaly ◽  
Ali Hassan Saudy ◽  
Farouk Fahmy El-Akshar

Copper nitride (Cu3N) thin films were deposited on a glass substrates using pulsed hollow cathode discharge (PHCD). The deposition was performed at 4kV charging voltage, and nitrogen gas pressure of 10-2 torr. The structure of the thin films was identified by X-Ray diffraction (XRD) technique. The XRD measurements indicated that the thin films have a nanocrystalline nature and exhibit orientation at (111) phase of Cu3N. The grain size of the nanocrystalline films ranged from 41 nm to 80 nm. The optical band gaps were measured using UV–Vis–NIR spectrophotometer and Touc's equation.  The optical band gaps of the films decreased from 2.55 eV to 2.25 eV by increasing the number of deposition shots from 20 to 80 shots. The surface morphology was studied by scanning electron microscopy (SEM). The SEM image indicates that the film have facetted surface morphology packed particles. 


2020 ◽  
Vol 60 (1) ◽  
pp. 015501
Author(s):  
Shoki Abe ◽  
Katsuyuki Takahashi ◽  
Seiji Mukaigawa ◽  
Koichi Takaki ◽  
Ken Yukimura

1992 ◽  
Vol 64 (17) ◽  
pp. 1831-1835 ◽  
Author(s):  
Jih Lie. Tseng ◽  
Jau Yurn. Kung ◽  
J. C. Williams ◽  
Steven T. Griffin

Sign in / Sign up

Export Citation Format

Share Document