Large-scale synthesis of gallium nitride nanosaws using a chemical vapor deposition method

2003 ◽  
Vol 373 (5-6) ◽  
pp. 620-625 ◽  
Author(s):  
Seung Yong Bae ◽  
Hee Won Seo ◽  
Jeunghee Park ◽  
Hyunik Yang
CrystEngComm ◽  
2020 ◽  
Vol 22 (4) ◽  
pp. 660-665 ◽  
Author(s):  
Fei Chen ◽  
Yi Yao ◽  
Weitao Su ◽  
Su Ding ◽  
Li Fu

A large-scale 2D WS2-Mo1−xWxS2 hybrid heterostructure can be realized by the reaction of S powder and sputtered Mo/W films through the chemical vapor deposition method.


2015 ◽  
Vol 3 (18) ◽  
pp. 4678-4682 ◽  
Author(s):  
Qiu-Ju Feng ◽  
Hong-Wei Liang ◽  
Yi-Ying Mei ◽  
Jia-Yuan Liu ◽  
C. C. Ling ◽  
...  

A single large-scale ZnO microwire (MW) homojunction LED is fabricated by an electric field assisted chemical vapor deposition method.


2003 ◽  
Vol 766 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masao Onishi ◽  
Manabu Takenshita ◽  
Toshio Kinoshita ◽  
Kazunori Koga ◽  
...  

AbstractAn ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.


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