Dimensionality and temperature dependence of the radiative lifetime of J-aggregates with Davydov splitting of the exciton band

2000 ◽  
Vol 316 (1-2) ◽  
pp. 37-44 ◽  
Author(s):  
I.G. Scheblykin ◽  
M.M. Bataiev ◽  
M. Van der Auweraer ◽  
A.G. Vitukhnovsky
Keyword(s):  
Temperature Dependence ◽  
Radiative Lifetime ◽  
Exciton Band ◽  
J Aggregates

scholarly journals Radiative and non-radiative transitions of excited Ti3+ cations in sapphire

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Avry Shirakov ◽  
Zeev Burshtein ◽  
Yehoshua Shimony ◽  
Eugene Frumker ◽  
Amiel A. Ishaaya
Keyword(s):  
Temperature Dependence ◽  
Electronic State ◽  
Fluorescence Lifetime ◽  
Radiative Lifetime ◽  
Radiative Transition ◽  
Zero Temperature ◽  
Thermal Phonon ◽  
Radiative Transitions ◽  
Thermal Enhancement ◽  
Radiative Transition Rate

AbstractWe have measured the fluorescence quantum efficiency in Ti3+:sapphire single crystals between 150 K and 550 K. Using literature-given effective fluorescence lifetime temperature dependence, we show that the zero temperature radiative lifetime is (4.44 ± 0.04) μs, compared to the 3.85 μs of the fluorescence lifetime. Fluorescence lifetime thermal shortening resolves into two parallel effects: radiative lifetime shortening, and non-radiative transition rate enhancement. The first is due to thermally enhanced occupation of a ΔE = 1,700 cm−1 higher (top) electronic state of the upper multiplet, exhibiting a transition oscillator strength of f = 0.62, compared to only 0.013 of the bottom electronic state of the same multiplet. The non-radiative rate relates to multi-phonon decay transitions stimulated by the thermal phonon occupation. Thermal enhancement of the configuration potential anharmonicity is also observed. An empiric expression for the figure-of-anharmonicity temperature dependence is given as $$\hat{{\bf{H}}}$$Hˆ (T) = $$\hat{{\bf{H}}}$$Hˆ (0)(1 + β exp(−ℏωco /kBT )), where $$\hat{{\bf{H}}}$$Hˆ (0) = 0.276, β = 5.2, ℏωco = 908 cm−1, and kB is the Boltzmann constant.

Temperature dependence of the radiative lifetime in GaN

1998 ◽  
Vol 58 (24) ◽  
pp. R15977-R15980 ◽  
Author(s):  
Oliver Brandt ◽  
Jens Ringling ◽  
Klaus H. Ploog ◽  
Hans-Jürgen Wünsche ◽  
Fritz Henneberger
Keyword(s):  
Temperature Dependence ◽  
Radiative Lifetime

Temperature dependence of the radiative lifetime in porous silicon

1992 ◽  
Vol 61 (19) ◽  
pp. 2344-2346 ◽  
Author(s):  
G. W. ’t Hooft ◽  
Y. A. R. R. Kessener ◽  
G. L. J. A. Rikken ◽  
A. H. J. Venhuizen
Keyword(s):  
Porous Silicon ◽  
Temperature Dependence ◽  
Radiative Lifetime

Comment on ‘‘Temperature dependence of the radiative lifetime in porous silicon’’

1993 ◽  
Vol 63 (4) ◽  
pp. 565-566 ◽  
Author(s):  
Martin Rosenbauer ◽  
Heinz Fuchs ◽  
Martin Stutzmann
Keyword(s):  
Porous Silicon ◽  
Temperature Dependence ◽  
Radiative Lifetime

Strong Nonmonotonous Temperature Dependence of Exciton Migration Rate in J Aggregates at Temperatures from 5 to 300 K

2000 ◽  
Vol 104 (47) ◽  
pp. 10949-10951 ◽  
Author(s):  
Ivan G. Scheblykin ◽  
Oleksii Yu. Sliusarenko ◽  
Leonid S. Lepnev ◽  
Alexei G. Vitukhnovsky ◽  
Mark Van der Auweraer
Keyword(s):  
Temperature Dependence ◽  
Migration Rate ◽  
Exciton Migration ◽  
J Aggregates

Temperature Dependent Radiative Lifetime of J-Aggregates

1996 ◽  
Vol 100 (21) ◽  
pp. 8640-8644 ◽  
Author(s):  
Valey F. Kamalov ◽  
Irina A. Struganova ◽  
Keitaro Yoshihara
Keyword(s):  
Radiative Lifetime ◽  
Temperature Dependent ◽  
J Aggregates

DISORDER-INDUCED RELAXATION OF FRENKEL EXCITONS IN MOLECULAR AGGREGATES

2001 ◽  
Vol 15 (28n30) ◽  
pp. 3761-3764 ◽  
Author(s):  
M. BEDNARZ ◽  
J. P. LEMAISTRE
Keyword(s):  
Phonon Scattering ◽  
Radiative Lifetime ◽  
Relaxation Mechanism ◽  
One Dimensional ◽  
Excitonic Band ◽  
Fast Relaxation ◽  
J Aggregates ◽  
Chain Lengths ◽  
Allowed State ◽  
Pauli Master Equation

A model, based on the intraband scattering of excitons in one-dimensional J-aggregates is proposed to describe the lengthening of the experimentally observed radiative lifetime with temperature. According to this mechanism, the exciton-phonon scattering transfers the oscillator strength fromt he lowest k≅0 optically allowed state to the other states within the excitonic band. A Pauli master equation, in which the hopping rates are calculated, is used to describe the thermalization of the excitonic band. Assuming a fast relaxation mechanism, the temperature dependence of the exciton radiative lifetime is simulated for various chain lengths.

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