Modeling of transient point defect dynamics in Czochralski silicon crystals

Prediction and adjustment of point defect (vacancies and self-interstitials) distribution in silicon crystals is of utmost importance for microelectronic applications. The simulation of growth processes is widely applied for process development and quite a few different sets of point defect parameters have been proposed. In this paper the transient temperature, thermal stress and point defect distributions are simulated for 300 mm Czochralski growth of the whole crystal including cone and cylindrical growth phases. Simulations with 12 different published point defect parameter sets are compared to the experimentally measured interstitial–vacancy boundary. The results are evaluated for standard and adjusted parameter sets and generally the best agreement in the whole crystal is found for models considering the effect of thermal stress on the equilibrium point defect concentration.

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Point defect aggregates in boron doped dislocation-free Czochralski silicon crystals

Journal of Crystal Growth ◽

10.1016/0022-0248(83)90016-7 ◽

1983 ◽

Vol 62 (1) ◽

pp. 129-140 ◽

Cited By ~ 13

Author(s):

C.A. Pimentel ◽

B.C.Brito Filho

Keyword(s):

Point Defect ◽

Czochralski Silicon ◽

Silicon Crystals ◽

Boron Doped

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Recognition and Imaging of Point Defect Diffusion, Recombination, and Reaction During Growth of Czochralski-Silicon Crystals

Journal of Electronic Materials ◽

10.1007/s11664-020-08203-w ◽

2020 ◽

Vol 49 (9) ◽

pp. 5110-5119

Author(s):

Masataka Hourai ◽

Eiichi Asayama ◽

Hideshi Nishikawa ◽

Manabu Nishimoto ◽

Toshiaki Ono ◽

...

Keyword(s):

Point Defect ◽

Defect Diffusion ◽

Czochralski Silicon ◽

Silicon Crystals

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Modelling of Thermal Field and Point Defect Dynamics During Silicon Single Crystal Growth Using CZ Technique

Proceedings of the VIII International Scientific Colloquium "Modelling for Materials Processing" ◽

10.22364/mmp2017.7 ◽

2017 ◽

Author(s):

Andrejs Sabanskis ◽

Jānis Virbulis

Keyword(s):

Crystal Growth ◽

Single Crystal ◽

Point Defect ◽

Thermal Field ◽

Single Crystal Growth ◽

Silicon Single Crystal ◽

Point Defect Dynamics

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Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.156-158.275 ◽

2009 ◽

Vol 156-158 ◽

pp. 275-278

Author(s):

Xiang Yang Ma ◽

Yan Feng ◽

Yu Heng Zeng ◽

De Ren Yang

Keyword(s):

High Temperature ◽

Low Temperature ◽

Czochralski Silicon ◽

Silicon Crystals ◽

Oxygen Precipitation ◽

High Temperature Anneal ◽

Oxygen Precipitates ◽

Co Doped ◽

Oswald Ripening

Oxygen precipitation (OP) behaviors in conventional and nitrogen co-doped heavily arsenic-doped Czocharalski silicon crystals subjected to low-high two-step anneals of 650 oC/8 h + 1000 oC/4-256 h have been comparatively investigated. Due to the nitrogen enhanced nucleation of OP during the low temperature anneal, much higher density of oxygen precipitates generated in the nitrogen co-doped specimens. With the extension of high temperature anneal, Oswald ripening of OP in the nitrogen co-doped specimens preceded that in the conventional ones. Moreover, due to the Oswald ripening effect, the oxygen precipitates in the conventional specimens became larger with a wider range of sizes. While, the sizes of oxygen precipitates in the nitrogen co-doped specimens distributed in a much narrower range with respect to the conventional ones.

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