Point defect aggregates in boron doped dislocation-free Czochralski silicon crystals

1983 ◽  
Vol 62 (1) ◽  
pp. 129-140 ◽  
Author(s):  
C.A. Pimentel ◽  
B.C.Brito Filho
Keyword(s):  
Point Defect ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Boron Doped

scholarly journals Evaluation of the Performance of Published Point Defect Parameter Sets in Cone and Body Phase of a 300 mm Czochralski Silicon Crystal

Crystals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 460
Author(s):  
Andrejs Sabanskis ◽  
Matīss Plāte ◽  
Andreas Sattler ◽  
Alfred Miller ◽  
Jānis Virbulis
Keyword(s):  
Thermal Stress ◽  
Point Defect ◽  
Process Development ◽  
Silicon Crystal ◽  
Transient Temperature ◽  
Czochralski Growth ◽  
Growth Phases ◽  
Defect Parameter ◽  
Czochralski Silicon ◽  
Silicon Crystals

Prediction and adjustment of point defect (vacancies and self-interstitials) distribution in silicon crystals is of utmost importance for microelectronic applications. The simulation of growth processes is widely applied for process development and quite a few different sets of point defect parameters have been proposed. In this paper the transient temperature, thermal stress and point defect distributions are simulated for 300 mm Czochralski growth of the whole crystal including cone and cylindrical growth phases. Simulations with 12 different published point defect parameter sets are compared to the experimentally measured interstitial–vacancy boundary. The results are evaluated for standard and adjusted parameter sets and generally the best agreement in the whole crystal is found for models considering the effect of thermal stress on the equilibrium point defect concentration.

Modeling of transient point defect dynamics in Czochralski silicon crystals

2001 ◽  
Vol 230 (1-2) ◽  
pp. 291-299 ◽  
Author(s):  
E. Dornberger ◽  
W. von Ammon ◽  
J. Virbulis ◽  
B. Hanna ◽  
T. Sinno
Keyword(s):  
Point Defect ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Point Defect Dynamics

scholarly journals Recognition and Imaging of Point Defect Diffusion, Recombination, and Reaction During Growth of Czochralski-Silicon Crystals

2020 ◽  
Vol 49 (9) ◽  
pp. 5110-5119
Author(s):  
Masataka Hourai ◽  
Eiichi Asayama ◽  
Hideshi Nishikawa ◽  
Manabu Nishimoto ◽  
Toshiaki Ono ◽  
...  
Keyword(s):  
Point Defect ◽  
Defect Diffusion ◽  
Czochralski Silicon ◽  
Silicon Crystals

Oxygen concentration in Czochralski silicon crystals depending on silicon monoxide evaporation from boron doped silicon melts

1998 ◽  
Vol 192 (1-2) ◽  
pp. 117-124 ◽  
Author(s):  
Susumu Maeda ◽  
Keisei Abe ◽  
Masaki Kato ◽  
Hideo Nakanishi ◽  
Keigo Hoshikawa ◽  
...  
Keyword(s):  
Oxygen Concentration ◽  
Silicon Monoxide ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Boron Doped ◽  
Doped Silicon

Evolution of flow pattern defects in boron-doped 〈100〉 Czochralski silicon crystals during secco etching procedure

2004 ◽  
Vol 269 (2-4) ◽  
pp. 310-316 ◽  
Author(s):  
Jianfeng Zhang ◽  
Caichi Liu ◽  
Qigang Zhou ◽  
Jing Wang ◽  
Qiuyan Hao ◽  
...  
Keyword(s):  
Flow Pattern ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Boron Doped

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

2009 ◽  
Vol 156-158 ◽  
pp. 275-278
Author(s):  
Xiang Yang Ma ◽  
Yan Feng ◽  
Yu Heng Zeng ◽  
De Ren Yang
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
High Temperature Anneal ◽  
Oxygen Precipitates ◽  
Co Doped ◽  
Oswald Ripening

Oxygen precipitation (OP) behaviors in conventional and nitrogen co-doped heavily arsenic-doped Czocharalski silicon crystals subjected to low-high two-step anneals of 650 oC/8 h + 1000 oC/4-256 h have been comparatively investigated. Due to the nitrogen enhanced nucleation of OP during the low temperature anneal, much higher density of oxygen precipitates generated in the nitrogen co-doped specimens. With the extension of high temperature anneal, Oswald ripening of OP in the nitrogen co-doped specimens preceded that in the conventional ones. Moreover, due to the Oswald ripening effect, the oxygen precipitates in the conventional specimens became larger with a wider range of sizes. While, the sizes of oxygen precipitates in the nitrogen co-doped specimens distributed in a much narrower range with respect to the conventional ones.

Oxygen‐induced recombination centers in as‐grown Czochralski silicon crystals

1983 ◽  
Vol 43 (3) ◽  
pp. 241-243 ◽  
Author(s):  
K. Nauka ◽  
H. C. Gatos ◽  
J. Lagowski
Keyword(s):  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Recombination Centers

Semi-Insulating Silicon for Microwave Devices

2009 ◽  
Vol 156-158 ◽  
pp. 101-106 ◽  
Author(s):  
Douglas M. Jordan ◽  
Kanad Mallik ◽  
Robert J. Falster ◽  
Peter R. Wilshaw
Keyword(s):  
Room Temperature ◽  
Energy Levels ◽  
Silicon On Insulator ◽  
Microwave Devices ◽  
Insulating Material ◽  
Czochralski Silicon ◽  
Boron Doped ◽  
Microwave Applications ◽  
Soi Substrates ◽  
Phosphorus Doped

The concept of fully encapsulated, semi-insulating silicon (SI-Si), Czochralski-silicon-on-insulator (CZ-SOI) substrates for silicon microwave devices is presented. Experimental results show that, using gold as a compensating impurity, a Si resistivity of order 400 kΩcm can be achieved at room temperature using lightly phosphorus doped substrates. This compares favourably with the maximum of ~180kΩcm previously achieved using lightly boron doped wafers and is due to a small asymmetry of the position of the two gold energy levels introduced into the band gap. Measurements of the temperature dependence of the resistivity of the semi-insulating material show that a resistivity ~5kΩcm can be achieved at 100°C. Thus the substrates are suitable for microwave devices working at normal operating temperatures and should allow Si to be used for much higher frequency microwave applications than currently possible.

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