Microstructure evolution and non-diamond carbon incorporation in CVD diamond thin films grown at low substrate temperatures

1997 ◽  
Vol 172 (3-4) ◽  
pp. 404-415 ◽  
Author(s):  
J. Michler ◽  
J. Stiegler ◽  
Y. von Kaenel ◽  
P. Moeckli ◽  
W. Dorsch ◽  
...  
Keyword(s):  
Thin Films ◽  
Microstructure Evolution ◽  
Cvd Diamond ◽  
Carbon Incorporation ◽  
Diamond Thin Films ◽  
Substrate Temperatures

scholarly journals Thermal Characterization of Polycrystalline CVD Diamond Thin Films

2009 ◽  
Vol 1 (1) ◽  
pp. 609-613 ◽  
Author(s):  
S. Lani ◽  
C. Ataman ◽  
W. Noell ◽  
D. Briand ◽  
N. de Rooij
Keyword(s):  
Thin Films ◽  
Thermal Characterization ◽  
Cvd Diamond ◽  
Diamond Thin Films

Measuring the Adhesion of Diamond Thin Films to Substrates Using the Blister Test

1995 ◽  
Vol 383 ◽  
Author(s):  
Jim Sizemore ◽  
R. J. Hohlfelder ◽  
J. J. Vlassak ◽  
W. D. Nix
Keyword(s):  
Thin Films ◽  
Test Data ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Simple Equation ◽  
Testing Technique ◽  
Blister Test ◽  
Plasma Enhanced Cvd ◽  
Si Substrates ◽  
Diamond Thin Films

ABSTRACTIt is shown that the blister testing technique can be used to measure the adhesion of thin films to their substrates. A brief discussion of blister test mechanics is presented here, leading to a simple equation relating adhesion to the height of the blister and the pressure causing it to grow. Blister test data for plasma-enhanced CVD diamond films on Si substrates have been analyzed using this relation. The tests show adhesion energies of 1.8– 2.6 J/m2.

Experimental studies of N+ implantation into CVD diamond thin films

1997 ◽  
Vol 40 (4) ◽  
pp. 361-368 ◽  
Author(s):  
Huoping Xin ◽  
Chenglu Lin ◽  
Jianxin Wang ◽  
Shichang Zou ◽  
Xiaohong Shi ◽  
...  
Keyword(s):  
Thin Films ◽  
Experimental Studies ◽  
Cvd Diamond ◽  
Diamond Thin Films

Growth of (100) oriented diamond thin films on ball structure diamond-like particles

1992 ◽  
Vol 7 (7) ◽  
pp. 1606-1609 ◽  
Author(s):  
Lee Chow ◽  
Alan Horner ◽  
Hooman Sakouri ◽  
Bahram Roughani ◽  
Swaminatha Sundaram
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Diamond Films ◽  
Cvd Diamond ◽  
X Ray ◽  
Oriented Films ◽  
Diamond Thin Films

The morphology of typical CVD diamond thin films has been shown to be controlled by the concentration of methane during deposition. For example, for CH4 concentrations c < 0.4% the (111) faces dominate, while at 0.4% < c < 1.2% (100) faces dominate. Here we showed that the (100) oriented diamond films can be grown on top of the microcrystalline ball-like particles under suitable conditions. These (100) oriented diamond films are grown under the condition of 1.5% methane in hydrogen, substrate temperature of 680 °C–750 °C, and pressure of 30–80 Torr. The bombardment of the diamond thin films by ions in the plasma is believed to be an important factor for the formation of (100) oriented films on top of the ball-like particles. SEM, Raman, and x-ray techniques were used to characterize the deposited (100) oriented diamond thin films.

THE ROLES OF AMBIENT OXYGEN AND SUBSTRATE TEMPERATURE ON GROWTH OF DIAMOND THIN FILMS BY PULSED LASER DEPOSITION

2002 ◽  
Vol 16 (06n07) ◽  
pp. 825-829 ◽  
Author(s):  
TSUYOSHI YOSHITAKE ◽  
TAKASHI NISHIYAMA ◽  
TAKESHI HARA ◽  
KUNIHITO NAGAYAMA
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Parameters ◽  
Ambient Oxygen ◽  
Diamond Thin Films ◽  
Substrate Temperatures

Diamond thin films were grown on diamond (100) substrates in oxygen atmospheres by pulsed laser deposition (PLD) using an ArF excimer laser. The suitable oxygen atmosphere of 5 × 10-2 Torr can etch the sp2 bonding fractions preferentially. At substrate temperatures between 550°C and 650°C, single-phase diamond films consisting of diamond crystal with diameters of 1 - 5 μm could be grown. The results demonstrated that the diamond thin films can be grown homoepitaxially using PLD by controlling the deposition parameters, such as the oxygen pressure and the substrate temperature.

Structure modelling of  3 and  9 coincident boundaries in CVD diamond thin films

1999 ◽  
Vol 48 (3) ◽  
pp. 245-251 ◽  
Author(s):  
Y. Zhang ◽  
H. Ichinose ◽  
m. nakanose ◽  
K. Ito ◽  
Y. Ishida
Keyword(s):  
Thin Films ◽  
Cvd Diamond ◽  
Diamond Thin Films
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