Enhancement of diamond film uniformity in a biased microwave-plasma-enhanced chemical vapor deposition system

1997 ◽  
Vol 180 (2) ◽  
pp. 198-205 ◽  
Author(s):  
S.H Kim ◽  
Y.S Park ◽  
W.S Yun ◽  
J.-W Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor

Determination of diamond [100] and [111] growth rate and formation of highly oriented diamond film by microwave plasma-assisted chemical vapor deposition

1995 ◽  
Vol 10 (12) ◽  
pp. 3115-3123 ◽  
Author(s):  
Hideaki Maeda ◽  
Kyo Ohtsubo ◽  
Miki Irie ◽  
Nobutaka Ohya ◽  
Katsuki Kusakabe ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Relative Growth Rate ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Relative Growth ◽  
Homoepitaxial Growth ◽  
Novel Method

A novel method was proposed for measuring the epitaxial growth rate of diamond by microwave plasma-assisted chemical vapor deposition (MPCVD). Cubo-octahedral crystals were formed on an Si(100) wafer and were used as the substrate in the homoepitaxial growth. Growth rates of the {100} and {111} were simultaneously measured from the change in the top view size of crystals. Thus, the relative growth rate of {100} to {111} was obtained without any limitation of its value. The homoepitaxial growth rate was strongly affected by the type of diamond faces, CH4 concentration in the gas phase, and deposition temperature. The growth rate of {100} was more dependent on CH4 concentration than that of {111}, while the activation energy for the [100] growth was about half that for the [111] growth. These tendencies were in accord with growth mechanisms proposed for each diamond plane. Reaction conditions were optimized based on the relative growth rate of (100) to (111) planes, and a highly oriented (100) diamond film with a quite smooth surface was formed on an Si(100) wafer.

LATERAL OVERGROWTH OF DIAMOND FILMS ON METAL MASKED SUBSTRATE BY MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION

2002 ◽  
Vol 16 (06n07) ◽  
pp. 841-844 ◽  
Author(s):  
H. YAMAMOTO ◽  
Y. NAOI ◽  
Y. FUJII ◽  
Y. SHINTANI
Keyword(s):  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Crystal Nucleation ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Mask Material

We have grown laterally overgrown diamond films on stripe patterned silicon substrates by microwave plasma chemical vapor deposition. Titanium was used as the mask material and stripe patterns were fabricated using conventional photolithographic method. The selective growth area and the metal mask part order to enhance the crystal nucleation was performed before photolithographic process. SEM observation revealed that the diamond film was laterally overgrown on titanium mask. The result width of diamond film was 16 μm. The grain size on mask region was about three times as large as that g rown on nucleation region.

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