Effect of the substrate state on the formation of diamond film in a low temperature microwave‐plasma‐enhanced chemical vapor deposition system

1995 ◽  
Vol 13 (3) ◽  
pp. 1619-1623 ◽  
Author(s):  
S. H. Kim ◽  
Y. S. Park ◽  
S. K. Jung ◽  
D. H. Kang ◽  
J.‐W. Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Substrate State

Determination of diamond [100] and [111] growth rate and formation of highly oriented diamond film by microwave plasma-assisted chemical vapor deposition

1995 ◽  
Vol 10 (12) ◽  
pp. 3115-3123 ◽  
Author(s):  
Hideaki Maeda ◽  
Kyo Ohtsubo ◽  
Miki Irie ◽  
Nobutaka Ohya ◽  
Katsuki Kusakabe ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Relative Growth Rate ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Relative Growth ◽  
Homoepitaxial Growth ◽  
Novel Method

A novel method was proposed for measuring the epitaxial growth rate of diamond by microwave plasma-assisted chemical vapor deposition (MPCVD). Cubo-octahedral crystals were formed on an Si(100) wafer and were used as the substrate in the homoepitaxial growth. Growth rates of the {100} and {111} were simultaneously measured from the change in the top view size of crystals. Thus, the relative growth rate of {100} to {111} was obtained without any limitation of its value. The homoepitaxial growth rate was strongly affected by the type of diamond faces, CH4 concentration in the gas phase, and deposition temperature. The growth rate of {100} was more dependent on CH4 concentration than that of {111}, while the activation energy for the [100] growth was about half that for the [111] growth. These tendencies were in accord with growth mechanisms proposed for each diamond plane. Reaction conditions were optimized based on the relative growth rate of (100) to (111) planes, and a highly oriented (100) diamond film with a quite smooth surface was formed on an Si(100) wafer.

Growth of carbon nanotubes by microwave plasma-enhanced chemical vapor deposition at low temperature

2000 ◽  
Vol 18 (4) ◽  
pp. 1864-1868 ◽  
Author(s):  
Young Chul Choi ◽  
Dong Jae Bae ◽  
Young Hee Lee ◽  
Byung Soo Lee ◽  
Gyeong-Su Park ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor

In-situ Plasma Diagnosis of Chemical Species in Microwave Plasma-assisted Chemical Vapor Deposition for the Growth of Carbon Nanotubes Using CH4/H2/NH3 Gases

2000 ◽  
Vol 621 ◽  
Author(s):  
Y.S. Woo ◽  
I.T. Han ◽  
N.S. Lee ◽  
J.E. Jung ◽  
D.Y. Jeon ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Carbon Sources ◽  
Chemical Species ◽  
Chemical Vapor ◽  
Optical Emission ◽  
Multi Wall Carbon Nanotubes

ABSTRACTSynthesis of multi-wall carbon nanotubes (MWNTs) was attempted by microwave plasma enhanced chemical vapor deposition using CH4/H2/NH3 gases on Ni/Cr-coated glass at low temperature. The synthesis was investigated by optical emission spectroscopy and quadrupole mass spectroscopy. It was observed that MWNTs could be grown within a very restrictive range of gas compositions. An addition of a small amount of NH3 resulted in a decrease of C2H2, which can be used to estimate the amount of carbon sources in plasma for the growth of MWNTs, and an increase of CN and Hα radicals acting as etching species of carbon phases. These results show that carbon nanotubes can be grown only under an appropriate condition that the growing process surpasses the etching process. The optimum C2H2 /Hα ratio in a gas mixture was found to be between 1 and 3 for the MWNT growth at low temperature.

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