Valence band

AccessScience ◽  
2015 ◽  
Keyword(s):  
Valence Band

Valence band parameters for Hg1−xMgxTe epitaxial layers

1998 ◽  
Vol 184-185 (1-2) ◽  
pp. 1209-1213
Author(s):  
K Paesler
Keyword(s):  
Valence Band ◽  
Epitaxial Layers

Effects of Giant Optical Anisotropy in R-plane GaN/AlGaN Quantum Wells by Valence Band Mixing

PIERS Online ◽  
2006 ◽  
Vol 2 (6) ◽  
pp. 562-566 ◽  
Author(s):  
Chun-Nan Chen ◽  
Kao-Feng Yarn ◽  
Win Jet Luo ◽  
Jih-Chen Chiang ◽  
Ikai Lo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Optical Anisotropy ◽  
Band Mixing ◽  
Valence Band Mixing

scholarly journals Erratum: Observation of monolayer valence band spin-orbit effect and induced quantum well states in MoX2

2014 ◽  
Vol 5 (1) ◽  
Author(s):  
Nasser Alidoust ◽  
Guang Bian ◽  
Su-Yang Xu ◽  
Raman Sankar ◽  
Madhab Neupane ◽  
...  
Keyword(s):  
Quantum Well ◽  
Valence Band ◽  
Spin Orbit ◽  
Quantum Well States

Oxidation of W(110): valence-band and W(4f) core-level spectroscopy

1994 ◽  
Vol 312 (1-2) ◽  
pp. 151-156 ◽  
Author(s):  
Charles H.F. Peden ◽  
Neal D. Shinn
Keyword(s):  
Valence Band ◽  
Core Level

scholarly journals Attosecond intra-valence band dynamics and resonant-photoemission delays in W(110)

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
S. Heinrich ◽  
T. Saule ◽  
M. Högner ◽  
Y. Cui ◽  
V. S. Yakovlev ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Electronic Band Structure ◽  
Photoelectric Effect ◽  
Final State ◽  
Electronic Band ◽  
Time Resolved ◽  
Resonant Photoemission ◽  
Pulse Trains ◽  
Electron Correlation Effects

AbstractTime-resolved photoelectron spectroscopy with attosecond precision provides new insights into the photoelectric effect and gives information about the timing of photoemission from different electronic states within the electronic band structure of solids. Electron transport, scattering phenomena and electron-electron correlation effects can be observed on attosecond time scales by timing photoemission from valence band states against that from core states. However, accessing intraband effects was so far particularly challenging due to the simultaneous requirements on energy, momentum and time resolution. Here we report on an experiment utilizing intracavity generated attosecond pulse trains to meet these demands at high flux and high photon energies to measure intraband delays between sp- and d-band states in the valence band photoemission from tungsten and investigate final-state effects in resonant photoemission.

scholarly journals Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation

2019 ◽  
Vol 14 (1) ◽  
Author(s):  
Ya-Wei Huan ◽  
Ke Xu ◽  
Wen-Jun Liu ◽  
Hao Zhang ◽  
Dmitriy Anatolyevich Golosov ◽  
...  
Keyword(s):  
Valence Band ◽  
Transition Metal Dichalcogenides ◽  
Three Dimensional ◽  
Optoelectronic Devices ◽  
Band Alignment ◽  
Band Offsets ◽  
Group Iii ◽  
Nanoelectronic Devices ◽  
Metal Dichalcogenides ◽  
Band Alignments

AbstractHybrid heterojunctions based on two-dimensional (2D) and conventional three-dimensional (3D) materials provide a promising way toward nanoelectronic devices with engineered features. In this work, we investigated the band alignment of a mixed-dimensional heterojunction composed of transferred MoS2 on β-Ga2O3($$ 2- $$2-01) with and without nitridation. The conduction and valence band offsets for unnitrided 2D-MoS2/3D-β-Ga2O3 heterojunction were determined to be respectively 0.43 ± 0.1 and 2.87 ± 0.1 eV. For the nitrided heterojunction, the conduction and valence band offsets were deduced to 0.68 ± 0.1 and 2.62 ± 0.1 eV, respectively. The modified band alignment could result from the dipole formed by charge transfer across the heterojunction interface. The effect of nitridation on the band alignments between group III oxides and transition metal dichalcogenides will supply feasible technical routes for designing their heterojunction-based electronic and optoelectronic devices.

Effects of antibonds and basis-state nonorthogonality on the valence band of homopolar semiconductors

1976 ◽  
Vol 14 (2) ◽  
pp. 583-587 ◽  
Author(s):  
James Lancaster ◽  
K. S. Dy
Keyword(s):  
Valence Band

Experimental determination of the valence-band structure of molecular-beam-epitaxy-grown CdTe(110)

1989 ◽  
Vol 40 (12) ◽  
pp. 8370-8377 ◽  
Author(s):  
Hartmut Höchst ◽  
David W. Niles ◽  
Isaac Hernández-Calderón
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Structure ◽  
Experimental Determination ◽  
Valence Band ◽  
Molecular Beam ◽  
Valence Band Structure

scholarly journals Calculation of Band Offsets of Mg(OH)2-Based Heterostructures

2021 ◽  
Vol 2 (3) ◽  
pp. 274-283
Author(s):  
Masaya Ichimura
Keyword(s):  
Solar Cells ◽  
Valence Band ◽  
Dye Sensitized Solar Cells ◽  
Band Alignment ◽  
First Principles Calculation ◽  
Band Edge ◽  
Level Energy ◽  
Type I ◽  
Valence Band Edge ◽  
Generalized Gradient

The band alignment of Mg(OH)2-based heterostructures is investigated based on first-principles calculation. (111)-MgO/(0001)-Mg(OH)2 and (0001)-wurtzite ZnO/(0001)-Mg(OH)2 heterostructures are considered. The O 2s level energy is obtained for each O atom in the heterostructure supercell, and the band edge energies are evaluated following the procedure of the core-level spectroscopy. The calculation is based on the generalized gradient approximation with the on-site Coulomb interaction parameter U considered for Zn. For MgO/Mg(OH)2, the band alignment is of type II, and the valence band edge of MgO is higher by 1.6 eV than that of Mg(OH)2. For ZnO/Mg(OH)2, the band alignment is of type I, and the valence band edge of ZnO is higher by 0.5 eV than that of Mg(OH)2. Assuming the transitivity rule, it is expected that Mg(OH)2 can be used for certain types of heterostructure solar cells and dye-sensitized solar cells to improve the performance.

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