scholarly journals Erratum: Observation of monolayer valence band spin-orbit effect and induced quantum well states in MoX2

2014 ◽  
Vol 5 (1) ◽  
Author(s):  
Nasser Alidoust ◽  
Guang Bian ◽  
Su-Yang Xu ◽  
Raman Sankar ◽  
Madhab Neupane ◽  
...  
2014 ◽  
Vol 5 (1) ◽  
Author(s):  
Nasser Alidoust ◽  
Guang Bian ◽  
Su-Yang Xu ◽  
Raman Sankar ◽  
Madhab Neupane ◽  
...  

2010 ◽  
Vol 81 (11) ◽  
Author(s):  
Cheng-Tien Chiang ◽  
Aimo Winkelmann ◽  
Ping Yu ◽  
Jürgen Kirschner ◽  
Jürgen Henk

2020 ◽  
Vol 101 (23) ◽  
Author(s):  
I. V. Silkin ◽  
Yu. M. Koroteev ◽  
V. M. Silkin ◽  
E. V. Chulkov

2013 ◽  
Vol 15 (12) ◽  
pp. 125031 ◽  
Author(s):  
Bartosz Slomski ◽  
Gabriel Landolt ◽  
Stefan Muff ◽  
Fabian Meier ◽  
Jürg Osterwalder ◽  
...  

1998 ◽  
Vol 533 ◽  
Author(s):  
R. Hartmann ◽  
U. Gennser ◽  
D. Grützmacher ◽  
H. Sigg ◽  
E. Müller ◽  
...  

AbstractThe effect of strain compensation on the band gap and band alignment of Si/SiGeC MQWs is studied by photoluminescence (PL) spectroscopy. Evidence for type-I band alignment of strain reduced SiGeC MQWs is found. Values for the conduction and valence band offsets are given. A band gap reduction for exactly strain compensated SiGeC compared to compressive SiGeC is observed. This behavior is interpreted in terms of strain induced splitting and confinement shifts of the quantum well states. A good agreement between the model and the PL data is obtained.


2009 ◽  
Vol 16 (05) ◽  
pp. 689-696
Author(s):  
M. GUNES ◽  
E. KASAPOGLU ◽  
H. SARI ◽  
K. AKGUNGOR ◽  
I. SÖKMEN

Valence band structure with spin–orbit (SO) coupling of GaAs/Ga 1-x Al x As square quantum well (SQW) under the electric field by a calculation procedure based on a finite element method (FEM) is investigated using the multiband effective mass theory ([Formula: see text] method). The validity of the method is confirmed with the results of D. Ahn, S. L. Chuang and Y. C. Chang (J. Appl. Phys.64 (1998) 4056), who calculated valence band structure, using axial approximation for Luttinger–Kohn Hamiltonian and finite difference method. Our results demonstrated that SO coupling and electric field have significant effects on the valence band structure.


2008 ◽  
Vol 101 (26) ◽  
Author(s):  
J. Hugo Dil ◽  
Fabian Meier ◽  
Jorge Lobo-Checa ◽  
Luc Patthey ◽  
Gustav Bihlmayer ◽  
...  

2013 ◽  
Vol 15 (12) ◽  
pp. 125014 ◽  
Author(s):  
A M Shikin ◽  
A A Rybkina ◽  
M V Rusinova ◽  
I I Klimovskikh ◽  
A G Rybkin ◽  
...  

1996 ◽  
Vol 6 (11) ◽  
pp. 1461-1467 ◽  
Author(s):  
C. Sommers ◽  
P. M. Levy

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