Development of AlAsSb as a barrier material for ultra-thin-channel InGaAs nMOSFETs

ABSTRACTWe investigated AlAs0.56Sb0.44 epitaxial layers lattice-matched to InP grown by molecular beam epitaxy (MBE). Silicon (Si) and tellurium (Te) were studied as n-type dopants in AlAs0.56Sb0.44 material. Similar to most Sb-based materials, AlAs0.56Sb0.44 demonstrates a maximum active carrier concentration around low-1018 cm-3 when using Te as a dopant. We propose the use of a heavily Si-doped InAlAs layer embedded in the AlAsSb barrier as a modulation-doped layer. The In0.53Ga0.47As/AlAs0.56Sb0.44 double heterostructures with a 10 nm InGaAs well show an electron mobility of about 9400 cm2/V・s at 295 K and 32000 cm2/V・s at 46 K. A thinner 5 nm InGaAs well has an electron mobility of about 4300 cm2/V・s at 295 K. This study demonstrates that AlAs0.56Sb0.44 is a promising barrier material for highly scaled InGaAs MOSFETs and HEMTs.

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InP and InGaAs grown on InP substrate by molecular beam epitaxy

MATEC Web of Conferences ◽

10.1051/matecconf/202235503047 ◽

2022 ◽

Vol 355 ◽

pp. 03047

Author(s):

Hailong Yu ◽

Hanchao Gao ◽

Wei Wang ◽

Ben Ma ◽

Zhijun Yin ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Carrier Concentration ◽

Growth Temperature ◽

Electron Mobility ◽

Molecular Beam ◽

Epitaxial Layers ◽

Strongly Correlated ◽

Inp Substrate ◽

Inp Substrates

InP and InGaAs epitaxial layers on InP substrates using molecular beam epitaxy (MBE) have been studied. Carrier concentration and mobility of InP and InGaAs are found that are strongly correlated with the growth temperature and V/III ratio. The InGaAs layers using As2 were compared with the layers grown using As4 from a Riber standard cracker cell. When As4 is used, the highest electron mobility of InGaAs is 3960 cm2/(V·s) with the V/III ratio of 65. When converted to As2, the V/III ratio with the highest electron mobility decreased to 20. With the arsenic cracker temperature decreased from 950 ℃ to 830 ℃, the electron mobility increased from 4090 cm2/(V • s) to 5060 cm2/(V • s).

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Exciton spectra of ZnO epitaxial layers on lattice-matched substrates grown with laser-molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.126703 ◽

2000 ◽

Vol 76 (24) ◽

pp. 3549-3551 ◽

Cited By ~ 175

Author(s):

T. Makino ◽

C. H. Chia ◽

N. T. Tuan ◽

Y. Segawa ◽

M. Kawasaki ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Epitaxial Layers ◽

Laser Molecular Beam Epitaxy ◽

Lattice Matched

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GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy

Semiconductor Science and Technology ◽

10.1088/0268-1242/29/4/045011 ◽

2014 ◽

Vol 29 (4) ◽

pp. 045011 ◽

Cited By ~ 31

Author(s):

Stephen W Kaun ◽

Elaheh Ahmadi ◽

Baishakhi Mazumder ◽

Feng Wu ◽

Erin C H Kyle ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Homogeneous Lattice ◽

Lattice Matched

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Erratum: “Exciton spectra of ZnO epitaxial layers on lattice-matched substrates grown with laser-molecular-beam epitaxy” [Appl. Phys. Lett. 76, 3549 (2000)]

Applied Physics Letters ◽

10.1063/1.1290276 ◽

2000 ◽

Vol 77 (9) ◽

pp. 1405-1405 ◽

Cited By ~ 3

Author(s):

T. Makino ◽

C. H. Chia ◽

N. T. Tuan ◽

Y. Segawa ◽

M. Kawasaki ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Epitaxial Layers ◽

Laser Molecular Beam Epitaxy ◽

Lattice Matched

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MBE GROWTH OF NON-LATTICE MATCHED (BaCa)F2, (Pb,Sn)Se/(Ba,Ca)F 2 AND CdTe/(Ba,Ca)F2 ON Si SUBSTRATES

MRS Proceedings ◽

10.1557/proc-56-253 ◽

1985 ◽

Vol 56 ◽

Cited By ~ 3

Author(s):

H. ZOGG ◽

P. MAIER ◽

P. NORTON

Keyword(s):

Molecular Beam Epitaxy ◽

Mechanical Stress ◽

Lattice Constant ◽

Molecular Beam ◽

Rutherford Backscattering ◽

Epitaxial Layers ◽

Mbe Growth ◽

Electron Channeling ◽

Si Substrates ◽

Lattice Matched

AbstractGraded (Ca,Ba)F2 layers consisting of near lattice matched CaF2 at the Si interface and of BaF2 with 14% increased lattice constant at the top surface were grown by molecular beam epitaxy (MBE) on Si(111). Smooth and crackfree layers exhibiting Rutherford backscattering (RBS) channeling minima below 5% were obtained. Device quality epitaxial layers of PbTe, PbSe and (Pb,Sn)Se were grown on top of these structures. Mechanical stress at 300K was relaxed by athermal mechanisms in the fluoride- as well as in the Pb-salt films. - In preliminary runs, epitaxial CdTe-layers were obtained on Si(111) using the same fluoride-buffer film technique and which showed clear SEM electron channeling patterns.

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